Wide Bandgap Semiconductor Spintronics PDF Download

Author: Vladimir Litvinov
Publisher: CRC Press
ISBN: 9814669717
Category : Science
Languages : en
Pages : 192

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Book Description
This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla

Author: Vladimir Litvinov
Publisher: CRC Press
ISBN: 1040029205
Category : Technology & Engineering
Languages : en
Pages : 240

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Book Description
This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap state—an anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the Bernevig–Huges–Zhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number |C |=2. The book explores and actively discusses semiconductor spintronics and proposes various device implementations along the way. Although writings on this topic appear in the current literature, this book is focused on the materials science side of the question, providing a theoretical background for the most common concepts of spin-electron physics. It covers generic topics in spintronics without entering into device specifics since its aim is to give instructions to be used in solving problems of a general and specific nature. It is intended for graduate students and will serve as an introductory course in this specific field of solid state theory and applications.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Fan Ren
Publisher: World Scientific
ISBN: 9814486892
Category : Technology & Engineering
Languages : en
Pages : 526

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Book Description
This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.

Author: Matthew Hartmann Kane
Publisher:
ISBN:
Category : Diluted magnetic semiconductors
Languages : en
Pages :

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Book Description
New semiconductor materials may enable next-generation 'spintronic' devices which exploit both the spin and charge of an electron for data processing, storage, and transfer. The realization of such devices would benefit greatly from room temperature ferromagnetic dilute magnetic semiconductors. Theoretical predictions have suggested that room temperature ferromagnetism may be possible in the wide bandgap semiconductors GaMnN and ZnMnO, though the existing models require input from the growth of high-quality materials. This work focuses on an experimental effort to develop high-quality materials in both of these wide bandgap materials systems. ZnMnO and ZnCoO single crystals have been grown by a modified melt growth technique. X-ray diffraction was used to examine the structural quality and demonstrate the single crystal character of these devices. Substitutional transition metal incorporation has been verified by optical transmission and electron paramagnetic resonance measurements. No indications of ferromagnetic hysteresis are observed from the bulk single crystal samples, and temperature dependent magnetization studies demonstrate a dominant antiferromagnetic exchange interaction. Efforts to introduce ferromagnetic ordering were only successful through processing techniques which significantly degraded the material quality. GaMnN thin films were grown by metalorganic chemical vapor deposition. Good crystalline quality and a consistent growth mode with Mn incorporation were verified by several independent characterization techniques. Substitutional incorporation of Mn on the Ga lattice site was confirmed by electron paramagnetic resonance. Mn acted as a deep acceptor in GaN. Nevertheless, ferromagnetic hysteresis was observed in the GaMnN films. The apparent strength of the magnetization correlated with the relative ratio of trivalent to divalent Mn. Valence state control through codoping with additional donors such as silicon was observed. Additional studies on GaFeN also showed a magnetic hysteresis. A comparison with implanted samples showed that the common origin to the apparent strong ferromagnetic hysteresis related to contribution from Mn substitutional ions. The observed magnetic hysteresis is due to the formation of Mn-rich regions during the growth process. This work demonstrated that the original intrinsic models for room temperature ferromagnetism in the wide bandgap semiconductors do not hold and the room temperature ferromagnetism in these materials results from extrinsic contributions.

Author: Stefano Spezia
Publisher: Arcler Press
ISBN: 9781773611259
Category :
Languages : en
Pages : 0

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Book Description
Spintronics demands precise control of the storage, manipulation, and transfer of electron spin coherence in solid state systems. In particular, the manipulation of spins in semiconductor materials has become an active area of investigation, where the two main challenges are the enhancement of the electron spin coherence times and the development of spin manipulation techniques that do not compromise the spin lifetime.The book begins with a brief historical introduction about the discover of phenomena of both the giant magnetoresistance and the tunneling magnetoresistance, followed by discussions on the importance of electron spin in semiconductor applications. Moreover, the concepts of spin coherence and spin-coupling are introduced. Section 1 focuses on the properties of dilute magnetic semiconductors and ferromagnetic semiconductors, where in particular, the effect of electric field, a first-principles study and hybrid ferromagnet-semiconductor nanostructures are considered. Section 2 discusses of Rashba/Dresselhaus effects and optical responses of electron spins in semiconductors, with special deepening about the probing of spin splittings by photogalvanic spectroscopy, and electron spin detection by magneto-optical Kerr microscopy. Section 3 present recent works about dynamics, manipulation and transport of spin-polarized electron in magnetic wide-bandgap semiconductors, in III-V semiconductor low dimensional structures and in carbon nanotubes.

Author: William Franklin Koehl
Publisher:
ISBN: 9781267648556
Category :
Languages : en
Pages : 179

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Book Description
We develop a set of screening criteria that can be used in conjunction with computational simulations to systematically identify defects similar to the diamond nitrogen-vacancy center, but in other semiconductors that can be grown and microfabricated more easily than diamond. We identify several promising defects in a variety of semiconductors, focusing in particular on vacancy-related defects in silicon carbide. As a result of these predictions, we engage in several optical and magnetic resonance studies of the 4H polytype of silicon carbide. We succeed in identifying six new species of point defect that can be used as spin qubits in analogy to the diamond nitrogen-vacancy center, with two of these defects exhibiting room temperature operation.

Author: Peter Wellmann
Publisher: John Wiley & Sons
ISBN: 3527346716
Category : Technology & Engineering
Languages : en
Pages : 743

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Book Description
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472

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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Author: David Awschalom
Publisher: Springer Science & Business Media
ISBN: 9783540421764
Category : Science
Languages : en
Pages : 338

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Book Description
The manipulation of electric charge in bulk semiconductors and their heterostructures is the basis of nearly all modern electronic and opto-electronic devices. Recent studies of spin-dependent phenomena in semiconductors open the door to technologies that harness the spin of the electron in semiconductor devices. In addition to providing spin-dependent analogies that extend existing electronic devices into the realm of semiconductor "spintronics," the spin degree of freedom also offers prospects for fundamentally new functionality in the quantum domain, ranging from storage to computation. This is likely to play a crucial role in the information technologies in the 21st century. This book, written by a team of experts, provides an overview of emerging concepts in this rapidly developing field. The topics range from spin transport and injection in semiconductors and their heterostructures to coherent processes and computation in semiconductor quantum structures and microcavities.