Wide Bandgap Semiconductor-Based Power Converters for Electric Vehicle Applications PDF Download
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Author: Publisher: ISBN: Category : Electric current converters Languages : en Pages : 0
Book Description
Wide bandgap (WBG) semiconductor materials allow higher power and voltage, faster and more reliable power electronic devices. These characteristics lead to a massive improvement in power converters, especially for electric vehicles (EV) applications. As a result, new opportunities for high efficiency and power density is coming with the development of WBG power semiconductor. This paper introduces the application of WBG devices in power converters of EV. The EV development trend and the related circuit diagram of an EV system have been introduced. Serval typical power converters' topologies have been discussed. Meanwhile, WBG devices also bring challenges to a high voltage and frequency design. High current and voltage levels need a more powerful heating system. A higher switching speed requires lower loop parasitic inductance. This paper discusses how to apply WBG devices in the power converter design and address these challenges. Finally, The reliability test method of power converters has been discussed. The lifetime of all components in a power converter has been tested under different voltage and temperature levels. The failure reasons and influences parameters are analyzed.
Author: Publisher: ISBN: Category : Electric current converters Languages : en Pages : 0
Book Description
Wide bandgap (WBG) semiconductor materials allow higher power and voltage, faster and more reliable power electronic devices. These characteristics lead to a massive improvement in power converters, especially for electric vehicles (EV) applications. As a result, new opportunities for high efficiency and power density is coming with the development of WBG power semiconductor. This paper introduces the application of WBG devices in power converters of EV. The EV development trend and the related circuit diagram of an EV system have been introduced. Serval typical power converters' topologies have been discussed. Meanwhile, WBG devices also bring challenges to a high voltage and frequency design. High current and voltage levels need a more powerful heating system. A higher switching speed requires lower loop parasitic inductance. This paper discusses how to apply WBG devices in the power converter design and address these challenges. Finally, The reliability test method of power converters has been discussed. The lifetime of all components in a power converter has been tested under different voltage and temperature levels. The failure reasons and influences parameters are analyzed.
Author: Peter Wellmann Publisher: John Wiley & Sons ISBN: 3527824715 Category : Technology & Engineering Languages : en Pages : 743
Book Description
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Author: Douglas Pappis Publisher: BoD – Books on Demand ISBN: 3737609772 Category : Technology & Engineering Languages : en Pages : 270
Book Description
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Author: Grayson Zulauf Publisher: ISBN: Category : Languages : en Pages :
Book Description
Wide-bandgap power semiconductors promise to reshape the power electronics landscape, opening completely new use cases and increasing efficiency and power density in existing ones. Most notably, gallium nitride (GaN) and silicon carbide (SiC) were successfully commercialized in the past decades, with theoretical benefits over silicon of multiple orders-of-magnitude. When combined with soft-switching techniques and topologies, these wide-bandgap materials have the potential to move power conversion to MHz operating frequencies, radically shrinking power converters and enabling new fabrication methods with the frequency-driven reduction of passive component requirements. Unfortunately, soft-switched converters built at MHz frequencies have consistently underperformed their modeled efficiency, as this work shows for three DC-RF inverters at high- and very-high-frequency. These inverters have measured semiconductor losses nearly an order-of-magnitude greater than expected from manufacturer-provided simulation models, a discrepancy that demands investigation. These losses are attributed to the process of resonantly charging and discharging the output capacitance (Coss) of the power semiconductors, a loss mechanism termed "soft-switching losses" or "Coss losses." Our measurements constitute the first recognition of this problem in GaN HEMTs, and these initial measurements are then extended to SiC and Si MOSFETs, finding dependencies and scaling laws for each device class. To complete the understanding of losses at high-frequencies, the well-understood phenomenon in GaN HEMTs of dynamic on-resistance is then revisited. Our work conclusively shows that dynamic on-resistance cannot be accurately characterized using the standardized double-pulse-test, and uses the underlying physics to determine the parameters that must be controlled for accurate reporting. Using this measurement framework, this work extends the dynamic on-resistance measurements to MHz frequencies for the first time, finding that the majority of the dynamic effects in soft-switched converters occur below 1 MHz for the tested device. With both off-state and on-state losses precisely understood at MHz frequencies, the promise of high-frequency power conversion can finally be realized. While adopted widely in cell phones, inductive wireless power transfer for higher-value applications (e.g. electric vehicles) is beset by both low performance and high cost due to the limitations of litz wire. At 6.78 MHz, the first international industrial, scientific, and medical (ISM) band above 200 kHz, litz wire can be completely eliminated, paving the way to low cost, small, light, and high-performance systems. A 1 kW DC-DC converter that transfers power across a 2 cm gap with 6.6 cm diameter coils at over 95% efficiency is demonstrated, a new benchmark in power density and efficiency for MHz-frequency wireless power transfer. This performance would, plainly, not have been possible without the identification and quantification of Coss losses. Our future power, transportation, and computing infrastructures are dependent on the implementation of wide-bandgap power semiconductors to reduce size, weight, and cost while increasing efficiency to address the climate challenge. This thesis is our small contribution to meaningfully improving these semiconductors and showing what's possible for the next generation of power conversion.
Author: Suryanarayana Kajampady Publisher: Springer Nature ISBN: 9819961513 Category : Technology & Engineering Languages : en Pages : 258
Book Description
This book presents select peer-reviewed proceedings of the International Conference on Advances in Renewable Energy and Electric Vehicles (AREEV 2022). The topics covered include renewable energy sources, electric vehicles, energy storage systems, power system protection & security, smart grid, and wide bandgap semiconductor technologies. The book also discusses applications of signal processing, artificial neural networks, optimal and robust control systems, and modeling and simulation of power electronic converters. The book is a valuable reference for academics and professionals interested in power systems, renewable energy, and electric vehicles.
Author: Yosra Attia Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
Low losses fast switching wide band gap (WBG) semiconductors, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are becoming viable candidates for DC/DC converters switches in the powertrain of electric vehicle (EV). Thanks to the technology advancements, WBG power transistors are available now in the market with competing loss levels. In this research, the need for such devices to boost the system efficiency for extended vehicle mileage is justified. Case studies comparing the performance of the available options are presented, for the first time. The performance, motoring and regenerative braking, is studied at different junction temperatures. The results reported higher power density and increased car mileage using WBG semiconductors. These findings were consistent in automotive Nissan Leaf electric vehicle (NLEV) case and a Bombardier metro rail car, to provide the authentication of the developed plug-and-play model. Simulation and Experimental results were given to highlight the merits of the work.
Author: Jungwon Choi Publisher: ISBN: Category : Languages : en Pages :
Book Description
As demand for electric vehicles (EVs) grows, wireless power transfer (WPT) technology becomes beneficial by removing the need for manual intervention to charge EV batteries. These high-power applications require power electronics systems that not only efficiently deliver sufficient power, but are also small enough to be embedded in the EV. However, while the size of other vehicle components has shrunk considerably over the past decade, that of power electronics systems has not. This presents a major challenge to making power electronics systems for EVs, plasma generation and other high-power industrial applications both efficient and small. This dissertation describes the design and implementation of efficient, compact power electronics systems for charging EVs and other industrial applications, as well as their extensions to WPT. A large part of this work involves overcoming technical limitations by designing high-power (above 2 kW) and high-efficiency (above 90%) systems to operate at tens of MHz switching frequency. First, wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFETs or enhancement mode gallium nitride (eGaN) FETs are used to reduce the size and weight of the entire WPT system and improve system performance. With SiC MOSFETs and eGaN FETs, 2 kW resonant inverters and resonant rectifiers for WPT systems can successfully operate at 13.56 MHz switching frequency. Thus, this work opens up the possibility of achieving kilowatt-level output powers at MHz switching frequencies. After implementing a high-efficiency resonant inverter for the WPT system, the coupling coils must be designed very carefully to deliver power with high efficiency over a mid-range coil distance. Therefore, an open-type four-coil unit is also presented in this work. The advantage of the coils is that the resonant frequency can be changed by adjusting the length of copper wire and distance between two coils. Using this type of coil unit eliminates the need for external capacitors that incur additional losses. However, even when the coupling coils are designed and implemented perfectly to provide high efficiency, the WPT system performance may decrease because of misalignments between the transmitting and receiving coils. Specifically, resonant converters are sensitive to load variation, which increases losses in switching devices. The impedance of magnetic resonant coupling (MRC) coils seen by inverters can be easily changed according to the distance or alignment between transmitting and receiving coils. This is one of the main factors that degrades the overall efficiency of WPT systems. To overcome this issue, this dissertation introduces a new kind of matching network, called an impedance compression network (ICN), to maintain the robustness of coil efficiency in various coil positions. An ICN consisting of a resistance compression network (RCN) and a phase compression network (PCN) was designed and implemented to compensate for distance and alignment variations between coils in a WPT system. Using an ICN helps maintain zero voltage switching (ZVS) and zero dv/dt operation in a resonant inverter and achieve system performance of over 90% efficiency. While WPT systems offer a convenient way to enable high-power applications, a critical unresolved concern is the safety of these systems. This dissertation presents two safety guidelines for EMF exposure and previous studies that evaluate human exposure level compared to the values recommended in the regulations. However, the limits of human exposure to electric, magnetic and electromagnetic fields in high-power WPT systems have not been clearly demonstrated yet. Based on the guidelines and the previous research, future research is required to evaluate EMF exposure in high-frequency, high-power WPT systems. One of the challenges in designing WPT systems for EVs is the need to combine power amplifiers to obtain higher power levels. To address this problem, this dissertation proposes a power-combining resonant inverter that can be applied not only to WPT systems, but also plasma generation and other industrial applications. Current RF power amplifiers for plasma generation operate at very high frequency (VHF), but provide low efficiency around 70% because they use linear amplifier topologies. Using a resonant inverter with WBG devices provides high power while maintaining high efficiency in a 40.68 MHz plasma-generation system. However, WBG devices cannot effectively dissipate heat at frequencies above 40 MHz. To reduce the losses in each eGaN FET, a power-combining inverter based on a class Phi2 inverter is designed and implemented to provide 1.2 kW output power at 40.68 MHz. A configurable method used to tune a class Phi2 inverter allows us to easily connect four of them in parallel to create a power-combining inverter that can achieve up to 1.2 kW output power. Also, the proposed inverter topology reduces the power loss in each switching device, improving the power density of the resonant inverter. In conclusion, this dissertation proposes high-frequency, high-power resonant converters with WBG devices to improve the power density and efficiency of both WPT and plasma generation systems. Furthermore, it presents a novel ICN topology that mitigates misalignment problems caused by MRC coils.
Author: B. Jayant Baliga Publisher: Woodhead Publishing ISBN: 0081023073 Category : Technology & Engineering Languages : en Pages : 420
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
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Author: Peter Wellmann
Author: Douglas Pappis
Author: Grayson Zulauf
Author: Emre Gurpinar
Author: Samuel Vasconcelos Araújo
Author: Suryanarayana Kajampady
Author: Yosra Attia
Author: Jungwon Choi
Author: B. Jayant Baliga