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Author: Norman G. Einspruch Publisher: Academic Press ISBN: 1483217760 Category : Technology & Engineering Languages : en Pages : 396
Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author: Norman G. Einspruch Publisher: Academic Press ISBN: 1483217760 Category : Technology & Engineering Languages : en Pages : 396
Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author: R.S. Bauer Publisher: Elsevier ISBN: 0444600167 Category : Science Languages : en Pages : 663
Book Description
Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
Author: Hartmut Grabinski Publisher: Springer Science & Business Media ISBN: 1461543495 Category : Technology & Engineering Languages : en Pages : 234
Book Description
This book presents an updated selection of the most representative contributions to the 2nd and 3rd IEEE Workshops on Signal Propagation on Interconnects (SPI) which were held in Travemtinde (Baltic See Side), Germany, May 13-15, 1998, and in Titisee-Neustadt (Black Forest), Germany, May 19-21, 1999. This publication addresses the need of developers and researchers in the field of VLSI chip and package design. It offers a survey of current problems regarding the influence of interconnect effects on the electrical performance of electronic circuits and suggests innovative solutions. In this sense the present book represents a continua tion and a supplement to the first book "Signal Propagation on Interconnects", Kluwer Academic Publishers, 1998. The papers in this book cover a wide area of research directions: Beneath the des cription of general trends they deal with the solution of signal integrity problems, the modeling of interconnects, parameter extraction using calculations and measurements and last but not least actual problems in the field of optical interconnects.
Author: Paul H. Holloway Publisher: CRC Press ISBN: 9780849301650 Category : Technology & Engineering Languages : en Pages : 164
Book Description
This book provides a review of the state-of-the-advancing-art in growth, processing and devices from compound semiconductors. Consisting of the proceedings of an important topical conference held at the University of Florida, speakers from both the U.S. and Japan were present. This fascinating work discusses critical issues in growth and characterization by semi-insulating bulk crystals, with particular emphasis placed on the latest modification of gas sources. It includes the advantages, limitations, and techniques pertaining to chemical vapor deposition. This compilation presents the most recent advances in the new technologies involving compound semiconductors, thus it fills an important need in the fast-moving field of microelectronics. This one-of-a-kind resource provides contrasts and insight into U.S. and Japanese technologies and devices as well as indications of future directions. It provides a very up-to-date and comprehensive treatment of world-class scientific and technological developments in this astounding area of major commercial importance. These proceedings will be a useful, indispensable resource for scientific researchers, process engineers, and technology strategists.
Author: Herbert Kroemer Publisher: World Scientific ISBN: 9814474681 Category : Technology & Engineering Languages : en Pages : 385
Book Description
Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature — something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students.
Author: Richard S. Muller Publisher: John Wiley & Sons ISBN: 0471593982 Category : Technology & Engineering Languages : en Pages : 564
Book Description
Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Author: Norman G. Einspruch
Author: Norman G. Einspruch
Author: Norman G. Einspruch
Author: Norman G. Einspruch
Author: R.S. Bauer
Author: Hartmut Grabinski
Author: Norman G. Einspruch
Author: Paul H. Holloway
Author: Herbert Kroemer
Author: Richard S. Muller
Author: Norman G. Einspruch