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Author: Publisher: ISBN: Category : Languages : en Pages : 26
Book Description
This effort emphasizes the computation of the average and variance current density waveforms in the metal buses for estimating the MTF for electromigration effects. That effort is composed of two parts: The probabilistic simulation methods and software for computing the statistics of the current waveform at contact points to the buses; and the accurate extraction of the equivalent RC model of the bus for analyzing the bus currents. In addition, probabilistic methods have been applied to the calculation of the hot electron degradation in digital CMOS circuits, and the problem of estimating the maximum current (as opposed to the average) in the bus for worst case voltage drop analysis.
Author: Publisher: ISBN: Category : Languages : en Pages : 26
Book Description
This effort emphasizes the computation of the average and variance current density waveforms in the metal buses for estimating the MTF for electromigration effects. That effort is composed of two parts: The probabilistic simulation methods and software for computing the statistics of the current waveform at contact points to the buses; and the accurate extraction of the equivalent RC model of the bus for analyzing the bus currents. In addition, probabilistic methods have been applied to the calculation of the hot electron degradation in digital CMOS circuits, and the problem of estimating the maximum current (as opposed to the average) in the bus for worst case voltage drop analysis.
Author: Yusuf Leblebici Publisher: Springer Science & Business Media ISBN: 1461532507 Category : Technology & Engineering Languages : en Pages : 223
Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author: Jens Lienig Publisher: Springer ISBN: 3319735586 Category : Technology & Engineering Languages : en Pages : 171
Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Author: Publisher: ISBN: Category : Aeronautics Languages : en Pages : 804
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Norman G. Einspruch Publisher: Academic Press ISBN: 1483217744 Category : Technology & Engineering Languages : en Pages : 414
Book Description
VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.
Author: Manoj Kumar Majumder Publisher: CRC Press ISBN: 1000223094 Category : Science Languages : en Pages : 350
Book Description
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Author: Michail Maniatakos Publisher: Springer ISBN: 303015663X Category : Computers Languages : en Pages : 257
Book Description
This book contains extended and revised versions of the best papers presented at the 25th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017, held in Abu Dhabi, United Arab Emirates, in August 2017. The 11 papers included in this book were carefully reviewed and selected from the 33 full papers presented at the conference. The papers cover a wide range of topics in VLSI technology and advanced research. They address the latest scientific and industrial results and developments as well as future trends in the field of System-on-Chip (SoC) Design. On the occasion of the silver jubilee of the VLSI-SoC conference series the book also includes a special chapter that presents the history of the VLSI-SoC series of conferences and its relation with VLSI-SoC evolution since the early 80s up to the present.
Author: Sheldon Tan Publisher: Springer Nature ISBN: 3030261727 Category : Technology & Engineering Languages : en Pages : 460
Book Description
This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.
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Author: Ibrahim N. Hajj
Author: Yusuf Leblebici
Author: Jens Lienig
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Author: Norman G. Einspruch
Author: Manoj Kumar Majumder
Author: Michail Maniatakos
Author: Sheldon Tan
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