Ultrafast Lasers Based on Quantum Dot Structures PDF Download

Author: Edik U. Rafailov
Publisher: John Wiley & Sons
ISBN: 3527634495
Category : Science
Languages : en
Pages : 243

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Book Description
In this monograph, the authors address the physics and engineering together with the latest achievements of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices. Their approach encompasses a broad range of laser systems, while taking into consideration not only the physical and experimental aspects but also the much needed modeling tools, thus providing a holistic understanding of this hot topic.

Author: Edik U. Rafailov
Publisher: John Wiley & Sons
ISBN: 3527665609
Category : Science
Languages : en
Pages : 349

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Book Description
Written by a team of European experts in the field, this book addresses the physics, the principles, the engineering methods, and the latest developments of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices, as well as their applications in biophotonics. Recommended reading for physicists, engineers, students and lecturers in the fields of photonics, optics, laser physics, optoelectronics, and biophotonics.

Author: Christian Otto
Publisher: Springer Science & Business Media
ISBN: 3319037862
Category : Science
Languages : en
Pages : 301

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Book Description
This thesis deals with the dynamics of state-of-the-art nanophotonic semiconductor structures, providing essential information on fundamental aspects of nonlinear dynamical systems on the one hand, and technological applications in modern telecommunication on the other. Three different complex laser structures are considered in detail: (i) a quantum-dot-based semiconductor laser under optical injection from a master laser, (ii) a quantum-dot laser with optical feedback from an external resonator, and (iii) a passively mode-locked quantum-well semiconductor laser with saturable absorber under optical feedback from an external resonator. Using a broad spectrum of methods, both numerical and analytical, this work achieves new fundamental insights into the interplay of microscopically based nonlinear laser dynamics and optical perturbations by delayed feedback and injection.

Author: Victor Mikhailovich Ustinov
Publisher:
ISBN: 9780198526797
Category : Science
Languages : en
Pages : 306

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Book Description
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.

Author: André Röhm
Publisher: Springer
ISBN: 3658094028
Category : Science
Languages : en
Pages : 113

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Book Description
André Röhm investigates the dynamic properties of two-state lasing quantum dot lasers, with a focus on ground state quenching. With a novel semi-analytical approach, different quenching mechanisms are discussed in an unified framework and verified with numerical simulations. The known results and experimental findings are reproduced and parameter dependencies are systematically studied. Additionally, the turn-on dynamics and modulation response curves of two-state lasing devices are presented.

Author: Hilmi Volkan Demir
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453

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Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.

Author: Mayada Mohammed Tahir Taher
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 270

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Book Description
Recently, nonpolar InGaN/GaN optoelectronic structures have been widely studied for applications in ultrafast communication, solid-state lighting, solar cell, sensing, photonic integrated circuits and quantum cryptography. When grown in a core-shell architecture (where the nonpolar, multiple disk active region is radially grown on the sidewall of a hexagonal GaN nanowire), these devices exhibit superior properties that mainly arise from the availability of a larger active region. Recently, the viability of using such architectures in electrically injected, low-threshold single-nanowire laser operating at room temperature has been experimentally demonstrated. In contrast, axially (or expitaxially) grown disk-in-wire structures suffer from a smaller gain-volume and, thus, have failed to produce optically pumped lasing emissions. From fundamental physics point of view, the benefits of using nonpolar m-axis and a-axis oriented InGaN/GaN in the active region are as follows: a) lesser degree of lattice mismatch, resulting in a weaker strain field; b) absence of spontaneous (pyroelectric) polarization; c) smaller piezoelectric polarization, induced internal potential, and electric field in the carrier transport direction; d) stronger overlap of conduction electron and valence hole wavefunctions; e) elimination or reduction of quantum-confined stark effect (QCSE); f) higher transition probability (emission probability) and quantum efficiency; g) higher degree of polarized emission with spectral stability; and h) higher injection efficiency by reducing carrier overflow in a thicker active region. Nevertheless, nonpolar structures exhibit a small internal potential, which mainly arise from non-zero off-diagonal strain components. In addition, even when the active region is completely relaxed in such structures, there remains a small degree of anisotropy that originates from the fundamental symmetry lowering at the material interfaces. In this dissertation, we make efforts to: a) investigate the effects of atomistic strain distributions in realistic multiple dot-in-nanowire In0.08Ga0.92N/GaN structures, as reported in some recent experiments; b) compare the emission characteristics of c-axis and m-axis oriented optical structures (i.e. laser structure); c) explore possibility of improving optical transition probability (rate) via engineering the optical cavity spacer dot size, aspect ratio, Indium mole fraction, and crystal growth direction for precise control over nanowire geometry and high material quality, d) numerically investigate and demonstrate lasing from nonpolar p-i-n core−shell InGaN/GaN multiple quantum dots in nanowires under electrical injection at room temperature, e) carry out detailed numerical investigation with a goal to optimize optical gain, lasing threshold, dynamic response, and device performance of these ultrafast laser structures, and f) explore viability of nonpolar architecture for nanolaser for providing a route forward for integrable, electrically injected nanowire laser for novel nanophotonic applications. The core simulations are performed with an augmented version of the open-source NEMO 3-D software that uses a fully-atomistic valence force-field (VFF) for strain distributions and empirical sp3s*-spin tight-binding model to compute the electronic structure. Both linear and nonlinear components of internal polarization field have been included using a recently proposed first-principles based polarization model. When compared to conventional c-plane based polar structures, the nonpolar device, overall, exhibits a much weaker (yet non-zero) internal potential and improved emission characteristics. In particular, we have found that the m-plane structure exhibits a much smaller (peak ~18.5 mV) internal potential than the c-plane counterpart (peak ~242 mV). However, the fundamental atomicity in the active region results in pronounced anisotropy in the emission characteristic. The energy bandgap is found to be little larger (3.24 eV) in the m-plane structure than in the c-plane device (3.15 eV). With a stronger wavefunction overlap, m-plane clearly offers a higher optical transition probability. Yet, the overall yield in these nonpolar structures suffers from the presence of a strong localization of wavefunctions, which confines the carriers (electrons and holes) in just one (lowest) quantum disk. As for design optimization, it is found that increasing the spacer size (i.e. disk separation) leads to a higher transition rate. Furthermore, detailed analysis has been presented comparing the performance of c-plane, m-plane and the a-plane based InGaN disk-in-wire structures as they show promise in novel optoelectronic applications. It is found that the magnitude of the net polarization potential in the non-polar m-plane and a-plane structures is much smaller (~5 mV) than the polar c-plane counterpart (~129 mV). This particular finding eventually leads to the formation of strongly localized wavefunctions and higher optical transition probabilities in non-polar wurtzite structures. As for the terminal device characteristics, it is found that the disk-in-wire LED in the a-plane orientation offers the highest internal quantum efficiency (IQE) as well as the smallest efficiency droop characteristics.

Author: Alexei Baranov
Publisher: Elsevier
ISBN: 0857096400
Category : Technology & Engineering
Languages : en
Pages : 671

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Book Description
Semiconductor lasers have important applications in numerous fields, including engineering, biology, chemistry and medicine. They form the backbone of the optical telecommunications infrastructure supporting the internet, and are used in information storage devices, bar-code scanners, laser printers and many other everyday products. Semiconductor lasers: Fundamentals and applications is a comprehensive review of this vital technology. Part one introduces the fundamentals of semiconductor lasers, beginning with key principles before going on to discuss photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation. Part two then reviews applications of visible and near-infrared emitting lasers. Nonpolar and semipolar GaN-based lasers, advanced self-assembled InAs quantum dot lasers and vertical cavity surface emitting lasers are all considered, in addition to semiconductor disk and hybrid silicon lasers. Finally, applications of mid- and far-infrared emitting lasers are the focus of part three. Topics covered include GaSb-based type I quantum well diode lasers, interband cascade and terahertz quantum cascade lasers, whispering gallery mode lasers and tunable mid-infrared laser absorption spectroscopy. With its distinguished editors and international team of expert contributors, Semiconductor lasers is a valuable guide for all those involved in the design, operation and application of these important lasers, including laser and telecommunications engineers, scientists working in biology and chemistry, medical practitioners, and academics working in this field. Provides a comprehensive review of semiconductor lasers and their applications in engineering, biology, chemistry and medicine Discusses photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation Reviews applications of visible and near-infrared emitting lasers and mid- and far-infrared emitting lasers

Author: Chunlei Guo
Publisher: CRC Press
ISBN: 1000296520
Category : Science
Languages : en
Pages : 711

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Book Description
This comprehensive handbook gives a fully updated guide to lasers and laser systems, including the complete range of their technical applications. The first volume outlines the fundamental components of lasers, their properties and working principles. The second volume gives exhaustive coverage of all major categories of lasers, from solid-state and semiconductor diode to fiber, waveguide, gas, chemical, and dye lasers. The third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization.

Author: Kathy Lüdge
Publisher: John Wiley & Sons
ISBN: 3527639837
Category : Science
Languages : en
Pages : 412

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Book Description
A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research. By presenting both experimental and theoretical results, the distinguished authors consider solitary lasers with nano-structured material, as well as integrated devices with complex feedback sections. In so doing, they address such topics as the bifurcation theory of systems with time delay, analysis of chaotic dynamics, and the modeling of quantum transport. They also address chaos-based cryptography as an example of the technical application of highly nonlinear laser systems.