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Author: Eiji Takeda Publisher: Academic Press ISBN: 0126822409 Category : Juvenile Nonfiction Languages : en Pages : 329
Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author: Eiji Takeda Publisher: Academic Press ISBN: 0126822409 Category : Juvenile Nonfiction Languages : en Pages : 329
Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author: Yuhua Cheng Publisher: Springer Science & Business Media ISBN: 0306470500 Category : Technology & Engineering Languages : en Pages : 467
Book Description
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author: Paolo Pavan Publisher: Springer Science & Business Media ISBN: 1402026137 Category : Computers Languages : en Pages : 139
Book Description
Floating Gate Devices: Operation and Compact Modeling focuses on standard operations and compact modeling of memory devices based on Floating Gate architecture. Floating Gate devices are the building blocks of Flash, EPROM, EEPROM memories. Flash memories, which are the most versatile nonvolatile memories, are widely used to store code (BIOS, Communication protocol, Identification code,) and data (solid-state Hard Disks, Flash cards for digital cameras,). The reader, who deals with Floating Gate memory devices at different levels - from test-structures to complex circuit design - will find an essential explanation on device physics and technology, and also circuit issues which must be fully understood while developing a new device. Device engineers will use this book to find simplified models to design new process steps or new architectures. Circuit designers will find the basic theory to understand the use of compact models to validate circuits against process variations and to evaluate the impact of parameter variations on circuit performances. Floating Gate Devices: Operation and Compact Modeling is meant to be a basic tool for designing the next generation of memory devices based on FG technologies.
Author: Günther Bauer Publisher: Springer Science & Business Media ISBN: 3662024705 Category : Technology & Engineering Languages : en Pages : 335
Book Description
In the series of International Winter Schools on New Developments in Solid State Physics, the fourth one was devoted to the subject: "Two Dimensional Systems: Physics and Devices". For the second time the pro ceedings of one of these Winter Schools appear as a volume in the Springer Series in Solid-State Sciences (the earlier proceedings were published as Vol. 53). The school was held in the castle of MauterndorfjSalzburg (Austria) February 24-28, 1986. These proceedings contain contributions ba:sed on the thirty invited lectures. The school was attended by 179 registered participants (40% students), who came from western European countries, the United States of America, Japan, the People's Republic of China and Poland. As far as the subjects are conterned, several papers deal with the growth and characterization of heterostructures. Dynamical RHEED tech niques are described as a tool for in situ studies of MBE growth mech anisms. Various growth techniques, including MBE, MOMBE, MOCVD and modifications of these, are discussed. The limiting fa.ctors for the carrier mobilities and the inftuence of the spacer thickness in single het erostructures of GaAs/GaAIAs seem to be understood and are no longer a matter of controversy. In addition, the growth of two fascinating systems, Si/SiGe and Hg _ Cd Te/CdTe, is discussed in detail
Author: Richard S. Muller Publisher: John Wiley & Sons ISBN: 0471593982 Category : Technology & Engineering Languages : en Pages : 564
Book Description
Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Author: Kristin De Meyer Publisher: Springer Science & Business Media ISBN: 3709168279 Category : Technology & Engineering Languages : en Pages : 423
Book Description
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Author: Manoj Kumar Majumder Publisher: CRC Press ISBN: 1000223094 Category : Science Languages : en Pages : 350
Book Description
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Author: Joachim N. Burghartz Publisher: John Wiley & Sons ISBN: 1118517539 Category : Technology & Engineering Languages : en Pages : 637
Book Description
Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.
Author: Govind R. Kadambi Publisher: Springer Nature ISBN: 9811534772 Category : Science Languages : en Pages : 244
Book Description
This volumes presents select papers presented during the International Conference on Photonics, Communication and Signal Processing Technologies held in Bangalore from July 18th to 20th, 2018. The research papers highlight analytical formulation, solution, simulation, algorithm development, experimental research, and experimental investigations in the broad domains of photonics, signal processing and communication technologies. This volume will be of interest to researchers working in the field.
Author: Eiji Takeda
Author: Eiji Takeda
Author: Peter Maurice Lee
Author: Yuhua Cheng
Author: Paolo Pavan
Author: Günther Bauer
Author: Richard S. Muller
Author: Kristin De Meyer
Author: Manoj Kumar Majumder
Author: Joachim N. Burghartz
Author: Govind R. Kadambi