Author: Harold Mirels
Publisher:
ISBN:
Category : Fluid mechanics
Languages : en
Pages : 40
Book Description
Two-dimensional Ion Beams with Small Lateral Spreading
Author: Harold Mirels
Publisher:
ISBN:
Category : Fluid mechanics
Languages : en
Pages : 40
Book Description
Publisher:
ISBN:
Category : Fluid mechanics
Languages : en
Pages : 40
Book Description
NASA Technical Note
Nuclear Science Abstracts
Monthly Catalog of United States Government Publications
Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1878
Book Description
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1878
Book Description
Radial Flux Or Field of an Isotropic, Cylindrical Source of Finite Extent
Author: Edmund E. Callaghan
Publisher:
ISBN:
Category : Nuclear physics
Languages : en
Pages : 32
Book Description
Publisher:
ISBN:
Category : Nuclear physics
Languages : en
Pages : 32
Book Description
Monthly Catalog of United States Government Publications
Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1248
Book Description
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1248
Book Description
Monthly Catalog of United States Government Publications, Cumulative Index
Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 1250
Book Description
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 1250
Book Description
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Laser and Ion Beam Modification of Materials
Author: I. Yamada
Publisher: Elsevier
ISBN: 1483164047
Category : Technology & Engineering
Languages : en
Pages : 646
Book Description
Laser and Ion Beam Modification of Materials is a compilation of materials from the proceedings of the symposium U: Material Synthesis and Modification by Ion beams and Laser Beams. This collection discusses the founding of the KANSAI Science City in Japan, and the structures, equipment, and research projects of two institutions are discussed pertaining to eV-MeV ion beams. A description of ion beams as used in materials research and in manufacturing processes, along with trends in ion implantation technology in semiconductors, is discussed. Research into ion beams by China and its industrial uses in non-semiconductor area is noted. For industrial applications, developing technology in terms of high speed, large surface modifications and use of high doses is important. Thus, the development of different ion beam approaches is examined. Industrial applications of ion and laser processing are discussed as cluster beams are used in solid state physics and chemistry. Mention is made on a high power discharge pumped solid state physics (ArF) excimer laser as a potential light source for better material processing. Under ion beam material processing is nanofabrication using focused ion beams, important for research work in mesoscopic systems. Progress in the use of ion-beam mixing using kinetic energy of ion-beams to mingle with pre-deposited surface layers of substrate materials has shown promise. Advanced materials researchers and scientists, as well as academicians in the field of nuclear physics, will find this collection helpful.
Publisher: Elsevier
ISBN: 1483164047
Category : Technology & Engineering
Languages : en
Pages : 646
Book Description
Laser and Ion Beam Modification of Materials is a compilation of materials from the proceedings of the symposium U: Material Synthesis and Modification by Ion beams and Laser Beams. This collection discusses the founding of the KANSAI Science City in Japan, and the structures, equipment, and research projects of two institutions are discussed pertaining to eV-MeV ion beams. A description of ion beams as used in materials research and in manufacturing processes, along with trends in ion implantation technology in semiconductors, is discussed. Research into ion beams by China and its industrial uses in non-semiconductor area is noted. For industrial applications, developing technology in terms of high speed, large surface modifications and use of high doses is important. Thus, the development of different ion beam approaches is examined. Industrial applications of ion and laser processing are discussed as cluster beams are used in solid state physics and chemistry. Mention is made on a high power discharge pumped solid state physics (ArF) excimer laser as a potential light source for better material processing. Under ion beam material processing is nanofabrication using focused ion beams, important for research work in mesoscopic systems. Progress in the use of ion-beam mixing using kinetic energy of ion-beams to mingle with pre-deposited surface layers of substrate materials has shown promise. Advanced materials researchers and scientists, as well as academicians in the field of nuclear physics, will find this collection helpful.
Electric Propulsion
Author: Defense Documentation Center (U.S.)
Publisher:
ISBN:
Category : Space vehicles
Languages : en
Pages : 244
Book Description
Publisher:
ISBN:
Category : Space vehicles
Languages : en
Pages : 244
Book Description