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Author: Stephen Ingalls Long Publisher: ISBN: Category : Diffusion Languages : en Pages : 506
Book Description
The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract).
Author: Stephen Ingalls Long Publisher: ISBN: Category : Diffusion Languages : en Pages : 506
Book Description
The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract).
Author: Kenneth L. Klohn Publisher: ISBN: Category : Languages : en Pages : 43
Book Description
This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).
Author: Peter Capper Publisher: John Wiley & Sons ISBN: 9780470319499 Category : Technology & Engineering Languages : en Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Author: Tom Kuech Publisher: Elsevier ISBN: 0444633057 Category : Science Languages : en Pages : 1384
Book Description
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Author: Stephen Ingalls Long
Author: Stephen Ingalls Long
Author: Margaret Folkard
Author: Mark Joseph DiPippo
Author: Margaret Folkard
Author: Kenneth L. Klohn
Author: David Joseph Lawrence
Author: Peter Capper
Author: Michael Emmanuel Lee
Author: D. Alexiev
Author: Tom Kuech