Author: Jeremy Whitehurst
Publisher:
ISBN:
Category : Electron energy loss spectroscopy
Languages : en
Pages : 286

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Book Description

Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242

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Book Description

Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066

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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Author: Jo Nijs
Publisher: CRC Press
ISBN: 1000445062
Category : Science
Languages : en
Pages : 488

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Book Description
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.

Author: Sergey Rumyantsev
Publisher: World Scientific
ISBN: 981447777X
Category : Technology & Engineering
Languages : en
Pages : 342

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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Author: Robert B. Marcus
Publisher: Wiley-Interscience
ISBN:
Category : Computers
Languages : en
Pages : 240

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Book Description

Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 1566775078
Category : Electronic apparatus and appliances
Languages : en
Pages : 1280

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Book Description
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Author: Peizhi Liu (Researcher in materials science and engineering)
Publisher:
ISBN:
Category : Atomic structure
Languages : en
Pages : 123

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Book Description
The interface between silicon carbide (SiC) and silicon dioxide (SiO2) is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies showed an inverse relationship between the mobility and the transition layer width at SiC/SiO2 interface. In this research the transition region at the interface was investigated with atomic resolution transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). From a tilting series of high resolution TEM imaging and a through focal series of Z-contrast imaging, the 3D atomic structure of the SiC/SiO2 vicinal interface was constructed. The vicinal interface was revealed to consist of atomic steps and facets deviating from the ideal off-axis cut plane, which caused the atomic scale roughness of the interface. This is in strict contrast to previous studies that concluded on a chemical composition change. During the Z-contrast imaging, simultaneous EELS spectra were collected at the interface. A new model based method was developed to quantify these EELS spectra more precisely. Composition profiles of Si, C and O across the interface were extracted from the spectra. Composition profiles showed that the transition region was due to the vicinal interface and its atomic scale roughness but minimal stoichiometric change. Compositions calculated with a chemometrics approach conformed that the interface was stoichiometric. The transition layer width had an intrinsic value of ~2 nm viewed from the step edge-on direction. In addition, the interface of oxide layers grown on an on-axis cut substrate was examined with the same method mentioned above. The results showed the on-axis cut interface had the same composition fluctuation region as the off-axis cut interface viewing from the step edge-on direction. The roughness is directly correlated with processing conditions and the material system may have an intrinsic local roughness. This atomic scale roughness of the interface is limiting the electron mobility and reliability of SiC based devices.

Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 440

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Book Description
Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 708

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Book Description