Author: P. J. BulmanPublisher:
ISBN: 9780121408503
Category : Electronic equipment: Gunn effect diodes
Languages : en
Pages : 402
Book Description
Transferred Electron Devices
Author: P. J. BulmanPublisher:
ISBN: 9780121408503
Category : Electronic equipment: Gunn effect diodes
Languages : en
Pages : 402
Book Description
MICROWAVE SEMICONDUCTOR DEVICES
Author: SITESH KUMAR ROYPublisher: PHI Learning Pvt. Ltd.
ISBN: 9788120324183
Category : Technology & Engineering
Languages : en
Pages : 214
Book Description
The main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices. These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and industry, students, engineers and scientists need to understand the theoretical and experimental design and analysis of these devices. The book also deals with higher frequency microwaves called millimeter waves, which are finding wide applications in ground and satellite communication, radars and missile guidance. Millimeter wave system development is one of the most advanced technologies in radio science, especially in view of the ever increasing demand of communication and saturation of microwave frequency range with increasing number of channels. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes. It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III-V compound semiconductors. The book is intended to serve as a textbook for undergraduate electronics and electrical engineering students and postgraduate students of physics. It would also be a valuable reference book for professional engineers and physicists.
Physics of Semiconductor Devices
Author: Simon M. SzePublisher: John Wiley & Sons
ISBN: 0470068302
Category : Technology & Engineering
Languages : en
Pages : 828
Book Description
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
The Physics of Instabilities in Solid State Electron Devices
Author: Harold L. GrubinPublisher: Springer Science & Business Media
ISBN: 1489923446
Category : Science
Languages : en
Pages : 474
Book Description
The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
Computer Simulations of Transferred Electron Devices
Author: P. JeppesenMicrowave Semiconductor Devices
Author: Sigfrid YngvessonPublisher: Springer Science & Business Media
ISBN: 1461539706
Category : Technology & Engineering
Languages : en
Pages : 481
Book Description
We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.
Transferred Electron Devices
Author: Kalyankumar DasPublisher:
ISBN:
Category : Charge exchange
Languages : en
Pages : 206
Book Description
GaAs Devices and Circuits
Author: Michael S. ShurPublisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
NOISE PROPERTIES OF TRANSFERRED-ELECTRON DEVICES..
Author: JOSEPH THOMAS PATTERSONPublisher:
ISBN:
Category :
Languages : en
Pages : 202
Book Description
The Internal Dynamics and Microwave Properties of X-band Transferred-electron Devices
Author: Richard A. KiehlPublisher:
ISBN:
Category : Gunn effect
Languages : en
Pages : 152
Book Description