Author: Vladimir Litvinov Publisher: Springer ISBN: 3030120538 Category : Technology & Engineering Languages : en Pages : 163
Book Description
This book serves as a brief introduction to topological insulator physics and device applications. Particular attention is paid to the indirect exchange interaction mediated by near surface Dirac fermions and the spin texture this interaction favors. Along with useful information on semiconductor material systems, the book provides a theoretical background for most common concepts of TI physics. Readers will benefit from up to date information and methods needed to start working in TI physics, theory, experiment and device applications. Discusses inter-spin interaction via massless and massive Dirac excitations; Includes coverage of near-surface spin texture of the magnetic atoms as related to their mutual positions as well to their positions with respect to top and bottom surfaces in thin TI film; Describes non-RKKY oscillating inter-spin interaction as a signature of the topological state; Explains the origin of the giant Rashba interaction at quantum phase transition in TI-conventional semiconductors.
Author: Jiadong Zang Publisher: Springer ISBN: 3319973347 Category : Science Languages : en Pages : 426
Book Description
This book presents both experimental and theoretical aspects of topology in magnetism. It first discusses how the topology in real space is relevant for a variety of magnetic spin structures, including domain walls, vortices, skyrmions, and dynamic excitations, and then focuses on the phenomena that are driven by distinct topology in reciprocal momentum space, such as anomalous and spin Hall effects, topological insulators, and Weyl semimetals. Lastly, it examines how topology influences dynamic phenomena and excitations (such as spin waves, magnons, localized dynamic solitons, and Majorana fermions). The book also shows how these developments promise to lead the transformative revolution of information technology.
Author: Joon Lee Publisher: ISBN: Category : Languages : en Pages :
Book Description
This dissertation describes topological insulator systems hybridized with magnetism. The Dirac surface states induced by strong spin-orbit interaction can be modified by breaking time-reversal symmetry that protects the surface state. We study the modified surface states of topological insulators by introducing magnetism by doping magnetic atoms or interfacing a magnetic layer to the surface. Also, we explore potential spintronics applications of topological insulators by utilizing magnetic tunnel junctions to evidence the inherently spin-polarized texture of the topological insulator surface state. For this dissertation research, single crystalline topological insulator thin films grown by molecular beam epitaxy have been employed. From the motivation of breaking time-reversal symmetry in the surface state, the first experiments study the structural, magnetic, and magneto-transport properties of a magnetically doped, three-dimensional topological insulator, bismuth telluride doped with Mn. We observed ferromagnetism with a Curie temperature up to 17 K in films with ~2-10% Mn concentrations. The observed ferromagnetism is independent of carrier density in the Mn-doped bismuth telluride films, suggesting that it is not mediated by charge carriers. The next topological insulator system with magnetism is a hybrid topological insulator/ferromagnet heterostructure as a new approach for topological insulator hybrid systems using a dilute magnetic semiconductor Ga1-xMnxAs. A highly resistive Ga1-xMnxAs with out-of-plane magnetic anisotropy is cleanly interfaced with a topological insulator Bi2-xSbxTe3-ySey by molecular beam epitaxy. Magneto-transport measurements on a top-gated heterostructure device show a crossover from positive magneto-conductance to negative magneto-conductance as well as a systematic emergence of an anomalous Hall effect as the temperature is lowered or as the chemical potential approaches the Dirac point. The results are possibly interpreted as the modification of the surface state at the interface by the adjacent, ferromagnetic Ga1-xMnxAs layer. The last topological insulator system with magnetism is a topological insulator channel with a magnetic tunnel junction on it. We seek a potential role of topological insulators in spintronics as generators of carrier spin polarization. Electrical detection of the inherent spin polarization of the topological insulator surface state was demonstrated using a permalloy/Al2O3 magnetic tunnel junction on a (Bi,Sb)2Te3 channel. The observed hysteretic spin signals occurring at the magnetic switching field of the ferromagnet permalloy layer can be interpreted as the projection of the current-induced spin polarization on a topological insulator surface onto the magnetization of the ferromagnet via tunneling.
Author: Vladimir Litvinov Publisher: ISBN: 9783030120542 Category : SCIENCE Languages : en Pages :
Book Description
This book serves as a brief introduction to topological insulator physics and device applications. Particular attention is paid to the indirect exchange interaction mediated by near surface Dirac fermions and the spin texture this interaction favors. Along with useful information on semiconductor material systems, the book provides a theoretical background for most common concepts of TI physics. Readers will benefit from up to date information and methods needed to start working in TI physics, theory, experiment and device applications. Discusses inter-spin interaction via massless and massive Dirac excitations;Includes coverage of near-surface spin texture of the magnetic atoms as related to their mutual positions as well to their positions with respect to top and bottom surfaces in thin TI film;Describes non-RKKY oscillating inter-spin interaction as a signature of the topological state;Explains the origin of the giant Rashba interaction at quantum phase transition in TI-conventional semiconductors.
Author: Inamuddin Publisher: Materials Research Forum LLC ISBN: 1644902850 Category : Technology & Engineering Languages : en Pages : 195
Book Description
A topological insulator is an area that has yet to be fully explored and developed. The charge-induced bandgap fluctuation in the best-known bismuth-chalcogenide-based topological insulators is approximately 10MeV in magnitude. The major focus has shifted to the investigation of the presence of high-symmetry electronic bands as well as the utilization of easily produced materials. As the subject of topological insulators is still in the nascent stage, there is growing research and knowledge in the emerging field. This book is intended to provide the readers with an understanding of the needs and application of these materials. Keywords: Topological Insulators, Insulators, One-Dimensional Topological Insulators, Graphene, Magnetic Topological Insulator, Antiferromagnetic Phase, Ferromagnetic Phase, Topological Superconductor, Nonlinear Optical Behavior, Saturable Absorber, Quantum, Band Gap, Photonic Topological Insulators.
Author: Abhinav Kandala Publisher: ISBN: Category : Languages : en Pages :
Book Description
Topological Insulators (TI) are a novel class of materials that are ideally insulating in the bulk, but have gapless, metallic states at the surface. These surface states have very exciting properties such as suppressed backscattering and spin-momentum locking, which are of great interest for research efforts towards dissipation-less electronics and spintronics. The popular thermo-electrics from the Bi chalcogenide family -- Bi2Se3 and Bi2Te3 -- have been experimentally demonstrated to be promising candidate TI materials, and form the chosen material system for this dissertation research. The first part of this dissertation research focuses on low temperature magneto-transport measurements of mesoscopic topological insulator devices (Chapter 3). The top-down patterning of epitaxial thin films of Bi2Se3 and Bi2Te3 (that are plagued with bulk conduction) is motivated, in part, by an effort to enhance the surface-to-volume ratio in mesoscopic channels. At cryogenic temperatures, transport measurements of these devices reveal periodic conductance fluctuations in straight channel devices, despite the lack of any explicit patterning of the TI film into a ring or a loop. A careful analysis of the surface morphology and comparison with the transport data then demonstrate that scattering off the edges of triangular plateaus at the surface leads to the creation of Aharonov-Bohm electronic orbits responsible for the periodicity. Another major focus of this dissertation work is on combining topological insulators with magnetism. This has been shown to open a gap in the surface states leading to possibilities of magnetic "gating" and the realization of dissipation-less transport at zero-field, amongst several other exotic quantum phenomena. In this dissertation, I present two different schemes for probing these effects in electrical transport devices -- interfacing with insulating ferromagnets (Chapter 4) and bulk magnetic doping (Chapter 5). In Chapter 4, I shall present the integration of GdN with Bi2Se3 thin films. Careful structural, magnetic and electrical characterization of the heterostructures is employed to confirm that the magnetic species is solely restricted to the surface, and that the ferromagnetic GdN layer to be insulating, ensuring current flow solely through the TI layer. We also devise a novel device geometry that enables direct comparison of the magneto-transport properties of TI films with and without proximate magnetism, all, in a single device. A comparative study of weak anti-localization suggested that the overlying GdN suppressed quantum interference in the top surface state. In our second generation hetero-structure devices, GdN is interfaced with low-carrier density, gate-tunable thin films of (Bi,Sb)2Te3 grown on SrTiO3 substrates. These devices enable us to map out the comparison of magneto-transport, as the chemical potential is tuned from the bulk conduction band into the bulk valence band.In a second approach to study the effects of magnetism on TI's, I shall present, in Chapter 5, our results from magnetic doping of (Bi,Sb)2Te3 thin films with Cr -- a system that was recently demonstrated to be a Quantum Anomalous Hall (QAH) insulator. In a Cr-rich regime, a highly insulating, high Curie temperature ferromagnetic phase is achieved. However, a careful, iterative process of tuning the composition of this complex alloy enabled access to the QAHE regime, with the observation of near dissipation-less transport and perfect Hall quantization at zero external field. Furthermore, we demonstrate a field tilt driven crossover between a quantum anomalous Hall phase and a gapless, ferromagnetic TI phase. This crossover manifests itself in an electrically tunable, giant anisotropic magneto-resistance effect that we employ as a quantitative probe of edge transport in this system.
Author: M. Zahid Hasan Publisher: Elsevier Inc. Chapters ISBN: 0128086874 Category : Science Languages : en Pages : 50
Book Description
Topological Surface States (TSS) represent new types of two dimensional electron systems with novel and unprecedented properties distinct from any quantum Hall-like or spin-Hall effects. Their topological order can be realized at room temperatures without magnetic fields and they can be turned into magnets, exotic superconductors or Kondo insulators leading to worldwide interest and activity in the topic. We review the basic concepts defining such topological matter and the key experimental probe that revealed the topological order in the bulk of these spin-orbit interaction dominated insulators. This review focuses on the key results that demonstrated the fundamental topological properties such as spin-momentum locking, non-trivial Berrys phases, mirror Chern number, absence of backscattering, protection by time-reversal and other discrete (mirror) symmetries and their remarkable persistence up to the room temperature elaborating on results first discussed by M.Z. Hasan and C.L. Kane in the Rev. of Mod. Phys., 82, 3045 (2010). Additionally, key results on broken symmetry phases such as quantum magnetism and uperconductivity induced in topological materials are briefly discussed.
Author: B. Andrei Bernevig Publisher: Princeton University Press ISBN: 1400846730 Category : Science Languages : en Pages : 264
Book Description
This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topological indices. The book also analyzes recent topics in condensed matter theory and concludes by surveying active subfields of research such as insulators with point-group symmetries and the stability of topological semimetals. Problems at the end of each chapter offer opportunities to test knowledge and engage with frontier research issues. Topological Insulators and Topological Superconductors will provide graduate students and researchers with the physical understanding and mathematical tools needed to embark on research in this rapidly evolving field.
Author: Joel E. Moore Publisher: Elsevier Inc. Chapters ISBN: 0128086831 Category : Science Languages : en Pages : 31
Book Description
The theory of the topological insulator phase that emerges via spin-orbit coupling in three-dimensional materials is introduced, stressing its relationship to earlier topological phases in two dimensions. An unusual surface state with an odd number of “Dirac points” appears as a consequence of bulk topological invariants of the band structure. A different theoretical approach is then presented, based on the Berry phase of Bloch electrons, in order to illustrate a deep connection to the orbital contribution to the magnetoelectric polarizability in all materials. The unique features of transport in the topological insulator surface state are reviewed with an emphasis on possible experiments. The final section discusses briefly connections to interacting phases including topological superconductors and some recent efforts to construct fractional topological insulators in three dimensions.
Author: Heejae Kim Publisher: Springer Nature ISBN: 9811690774 Category : Computers Languages : en Pages : 171
Book Description
This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.
Author: Vladimir Litvinov
Author: Jiadong Zang
Author: Joon Lee
Author: Vladimir Litvinov
Author: Inamuddin
Author: Abhinav Kandala
Author: M. Zahid Hasan
Author: B. Andrei Bernevig
Author: Joel E. Moore
Author: Heejae Kim