Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 360
Book Description
Time-resolved Photoluminescence Studies of GaAs-AlGaAs Quantum Well Structures
Author: Recombination Dynamics in Quantum Well Semiconductor Structures
Author: Julie Elizabeth FouquetPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 536
Book Description
Scientific and Technical Aerospace Reports
Author: Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 456
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Nonlinear Optics: Materials and Devices
Author: Christos FlytzanisPublisher: Springer Science & Business Media
ISBN: 3642475477
Category : Science
Languages : en
Pages : 260
Book Description
The field of nonlinear optics has witnessed a tremendous evolution since its beginnings in the early sixties. Its frontiers have been extended in many direc tions and its techniques have intruded upon many areas of both fundamental and practical interest. The field itself has been enriched with many new phe nomena and concepts that have further extended its scope and strengthened its connection with other areas. As a consequence, it is becoming increasingly unrealistic to expect to cover the different facets and trends of this field in the lectures or proceed ings of a summer school, however advanced these may be. However much of the current progress and interest in this field springs to a large extent from the promise and expectation that highly performing all-optical devices that exploit and operate on the principles of nonlinear optics will constitute an important branch of future technology and will provide new alternatives in information processing and transmission. The conception of new devices, in general, requires an intricate and bold combination of facts and methods from most diverse fields, in order to perform functions and operations that fit into an overall technological ensemble.
Spectroscopy of Semiconductor Microstructures
Author: Gerhard FasolPublisher: Springer Science & Business Media
ISBN: 1475765657
Category : Science
Languages : en
Pages : 661
Book Description
Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989
Physics Briefs
Author: Dynamics of Excitons in GaAs-AlxGa1-xAs Multiple Quantum Wells Probed by Time-resolved Photoluminescence
Author: Er-Xuan PingPhysics and Applications of Quantum Wells and Superlattices
Author: E.E. MendezPublisher: Springer Science & Business Media
ISBN: 1468454781
Category : Science
Languages : en
Pages : 456
Book Description
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Science and Technology of Mesoscopic Structures
Author: Susumu NambaPublisher: Springer Science & Business Media
ISBN: 4431669221
Category : Science
Languages : en
Pages : 477
Book Description
The International Symposium on the Science and Technology of Mesoscopic Structures was held at Shin-Kohkaido in Nara from November 6-8, 1991. The symposium was sponsored by the International Institute for Advanced Study and partly by Nara Prefecture, Nara City, Nara Convention Bureau, and the Ministry of Education, Science and Culture of Japan, as well as industrial organizations. We would like to acknowledge the support of the symposium by these or ganizations. The scope of the symposium was planned by the organizing committee to cover outstanding contributors in the fields of (1) ballistic transport, (2) electron wave guides and interference effects, (3) quantum confinement effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6) fabrication technology of meso scopic structures. Twenty-six invited speakers were selected from the United States, Europe, and Japan. In addition twenty-four contributed papers were accepted for presentation at the poster session. These papers are included in the proceedings. We are grateful to the organizing committee, Ms. Y oshiko Kusaki of the Inter national Institute for Advanced Study for the secretarial service, and Dr. Nobuya Mori, Osaka University, for his scientific cooperation. Thanks are also due to the authors and the participants for their contributions to a successful symposium.
Resonant Tunneling in Semiconductors
Author: L.L. ChangPublisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.