Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Tight-binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline Silicon
Author: A Tight Binding Molecular Dynamics Study of Vacancy and Interstitial Annihilation in Silicon
Author: Mary Tekla ZawadzkiInternational Conference on Simulation of Semiconductor Processes and Devices
Author: Ion-Solid Interactions for Materials Modification and Processing: Volume 396
Author: D. B. PokerPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 940
Book Description
Several beam-solid interaction techniques have been developed that can either stand alone or be used in connection with others for materials processing, for fabrication of devices with enhanced electro-optical and mechanical properties, and with enhanced resistance to corrosion and erosion. For example, advances in focused ion beams (FIB) have brought out-of-reach ideas and applications to fruition. This book from MRS focuses on the developments in ion-beam-assisted processing of materials and reviews successful applications of the techniques. Topics include: fundamentals of ion-solid interactions; ion-beam mixing; radiation damage; insulators and wide bandgap materials; polymers; optical materials; plasma and ion-assisted techniques; metals and tribology; focused ion beams; fundamental semiconductor processing and compound semiconductors.
C, H, N and O in Si and Characterization and Simulation of Materials and Processes
Author: A. BorghesiPublisher: Newnes
ISBN: 044459633X
Category : Technology & Engineering
Languages : en
Pages : 580
Book Description
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Laser Annealing Processes in Semiconductor Technology
Author: Fuccio CristianoPublisher: Woodhead Publishing
ISBN: 0128202564
Category : Technology & Engineering
Languages : en
Pages : 428
Book Description
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
A Study of the Performance of Tight Binding Models for Silicon and Silicon Germanium Alloys
Author: Amanda Killen RobertsPublisher:
ISBN:
Category :
Languages : en
Pages : 338
Book Description
Formation and Transport Properties of Defects in Boron-doped Silicon Studied Through Tight Binding Bond Models
Author: Paul Brent RasbandMolecular Dynamics
Author: Lichang WangPublisher: BoD – Books on Demand
ISBN: 9535104446
Category : Computers
Languages : en
Pages : 448
Book Description
Molecular Dynamics is a two-volume compendium of the ever-growing applications of molecular dynamics simulations to solve a wider range of scientific and engineering challenges. The contents illustrate the rapid progress on molecular dynamics simulations in many fields of science and technology, such as nanotechnology, energy research, and biology, due to the advances of new dynamics theories and the extraordinary power of today's computers. This second book begins with an introduction of molecular dynamics simulations to macromolecules and then illustrates the computer experiments using molecular dynamics simulations in the studies of synthetic and biological macromolecules, plasmas, and nanomachines. Coverage of this book includes: Complex formation and dynamics of polymers Dynamics of lipid bilayers, peptides, DNA, RNA, and proteins Complex liquids and plasmas Dynamics of molecules on surfaces Nanofluidics and nanomachines
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