Thin Films and Heterojunctions of Tetravalent Hafnium Ion(hf4 ) Doped Perovskite Manganite La1-Xhfxmno3 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Thin Films and Heterojunctions of Tetravalent Hafnium Ion(hf4 ) Doped Perovskite Manganite La1-Xhfxmno3 PDF full book. Access full book title Thin Films and Heterojunctions of Tetravalent Hafnium Ion(hf4 ) Doped Perovskite Manganite La1-Xhfxmno3 by Lin Wang. Download full books in PDF and EPUB format.
Author: Lin Wang Publisher: ISBN: 9781360994130 Category : Languages : en Pages :
Book Description
This dissertation, "Thin Films and Heterojunctions of Tetravalent Hafnium Ion(Hf4 ) Doped Perovskite Manganite La1-xHfxMnO3" by Lin, Wang, 汪琳, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4545130 Subjects: Perovskite Manganite Thin films Heterojunctions
Author: Lin Wang Publisher: Open Dissertation Press ISBN: 9781360994116 Category : Science Languages : en Pages : 168
Book Description
This dissertation, "Thin Films and Heterojunctions of Tetravalent Hafnium Ion(Hf4 ) Doped Perovskite Manganite La1-xHfxMnO3" by Lin, Wang, 汪琳, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4545130 Subjects: Perovskite Manganite Thin films Heterojunctions
Author: Libin Jin Publisher: ISBN: 9781361025710 Category : Languages : en Pages :
Book Description
This dissertation, "Epitaxial Thin Films and Heterojunctions of Electron Doped Manganite La1-xHfxMnO3" by Libin, Jin, 靳立彬, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled EPITAXIAL THIN FILMS AND HETEROJUNCTIONS OF ELECTRON DOPED MANGANITE La Hf MnO 1-x x 3 Submitted by Jin Libin For the Degree of Master of Philosophy at The University of Hong Kong in October 2015 The strong electron correlated system like perovskite oxides in transition metal oxides have been studied for many years. Most efforts have been focused mainly 3+ 4+ on the hole-doped manganites with Mn /Mn double exchange interaction. Recently, the tetravalent ions doping has attracted considerable attention to make electron doping LaMnO compounds. Such electron-doped manganites may be applied for fabrication of all-manganites devices potentially. The sensitivities to magnetic fields, currents, electric fields, photo illumination and mechanical strain make the electron-doped manganites of great interests for relevant applications. In this thesis, thin films and heterojunctions of tetravalent hafnium doped perovskite manganite La Hf MnO were fabricated. The hafnium shows a 1-x x 3 unique tetravalent state as well as an ion radius closed to trivalent lanthanum ion. These properties make the investigation on La Hf MnO system relatively 1-x x 3 simple and reliable. The structural and physical properties of La Hf MnO (x=0.1, 0.2, 0.3) thin 1-x x 3 films were studied systematically. The crystal structure and epitaxy of La 1- Hf MnO thin films were examined by X-ray diffraction. The temperature x x 3 dependent resistance and magnetization of different samples were investigated in detail. Both temperature dependent resistance and field dependent magnetization indicated the evident transition between paramagnetic and ferromagnetic states. The electronic structures of epitaxial La Hf MnO were measured by X-ray 0.9 0.1 3 Photoelectron Spectroscopy. Both spectrum of Mn 3s and Mn 2p demonstrated 2+ 3+ the composition of Mn /Mn ions. Such evidence strongly suggested the electron-conductive mechanism in La Hf MnO systems. 0.9 0.1 3 The heterojunctions composed of oxygen-deficient SrTiO and 3-δ La Hf MnO thin films have been studied. These heterojunctions demonstrate 0.9 0.1 3 good rectifying characteristics with very low leakage current and high breakdown voltage in a wide temperature range. X-ray diffraction and electron backscattering diffraction measurements reveal that both SrTiO and La Hf MnO layers 3-δ 0.9 0.1 3 have single crystal nature and [001]-orientation. Transmission electron microscope images show an excellent epitaxial growth of SrTiO and 3-δ La Hf MnO layers. Such all-oxides junctions utilizing the bi-layer 0.9 0.1 3 heterostructure may be applied in microelectronic devices. The n-i-p heterojunctions have been fabricated by depositing an n-type La Hf MnO layer on p-type Si with a thin SrTiO intermediate layer. These 0.9 0.1 3 3 junctions exhibit excellent rectifying properties for temperature from 20 K to 300 K. Under illumination of 630 nm light a remarkable photocurrent has been observed. The photosensitivity is over 1200% under -3 V bias and illumination of the light at room temperature, demonstrating very a pronounced photocurrent effect. The injection of photo-carriers could be responsible for the observed phenomenon. The obtained results in this thesis demonstrate the electron-conductive mechanism in La Hf MnO system. The La Hf MnO based heterojunctions 1-x x 3 0.9 0.1 3 show remarkable characteristics and may
Author: Zhenping Wu Publisher: Open Dissertation Press ISBN: 9781361307700 Category : Languages : en Pages :
Book Description
This dissertation, "Studies on thin films and heterojunctions of electron/hole-doped perovskite manganites" by Zhenping, Wu, 吴真平, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Intensive research interests in condensed matter physics have been focused at the strongly correlated electron systems. Most of the efforts were devoted in hole-doped manganites with a double exchange interaction between Mn3+/Mn4+. Recently, tetravalent ions substitution has also stimuli much attention as a supplement for the hole-doping. Such electron-doped manganites may be of great potential for the development of all-manganites devices. Manganites are extremely sensitive to external disturbances, such as magnetic fields, electric fields, currents, mechanical strain, and photo illumination, etc. These extraordinary properties make manganites promising for practical applications. In this thesis, the field modulation on physical properties in electron/hole-doped manganites films and heterojunctions were investigated. The effects of tetravalent hafnium doping on the structural, transport, and magnetic properties of polycrystalline La1-xHfxMnO3(LHMO) (0.05 Heterojunctions composed of n-type SrTiO3-δand p-type GaAs exhibited excellent rectifying behavior from 40K to room temperature. The photocarrier injection effect and a colossal photo-resistance were observed. Strong dependences on both temperature and bias voltage were found as well, which might be under stood by considering the band structure of the formed p-njunction. By employing an ultrathin SrTiO3buffer layer, La0.8Ca0.2MnO3films could be epitaxially grown on GaAs substrates. The heterostructures exhibit good rectifying behavior with a paramagnetic-ferromagnetic transition at 200K. The variation of diffusion voltage with temperature in these heterostructures could be explained by the effects of the Hund's rule coupling between the La0.8Ca0.2MnO3and the buffer layer. The effects of the strain induced by ferroelectric poling on the magnetic and electric properties have been investigated by using 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3(PMN-PT) substrates. The polarization of the PMN-PT crystal reduces the biaxial tensile strain in the formed La0.9Hf0.1MnO3layer.It results in a significant decrease in resistance and an enhancement of the phase transition temperature as well as the magnetization. The impact of the lattice strain on the charge/orbital ordering state was also been studied. The modification of charge/orbital ordering phase by the electric fields and ferroelectric polarization suggested that the unstable states in the manganites are sensitive to the strain. Heterojunctions of La1-xHfxMnO3/Nb: SrTiO3 were fabricated and investigated under different fields (electric, magnetic and optic). These heterojunctions exhibited excellent rectifying behavior in a wide temperature range. Their properties could be significantly modulated by magnetic fields. Prominent photovoltaic effect was also observed in the formed junctions. DOI: 10.5353/th_b4979930 Subjects: Thin films Heteroju
Author: Lin Wang
Author: Lin Wang
Author: Lin Wang (Ph. D.)
Author: Libin Jin
Author: Zhenping Wu
Author: 靳立彬