Thin Film Deposition by the Ionized Cluster Beam Method PDF Download

Author: Syed Ejazul Huq
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Toshinori Takagi
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244

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Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.

Author: Dave Turner
Publisher:
ISBN:
Category :
Languages : en
Pages : 228

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Author: Maurice H. Francombe
Publisher: Elsevier
ISBN: 1483103307
Category : Science
Languages : en
Pages : 262

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Book Description
Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter. Chapter 1 covers ionized cluster beam deposition; epitaxy; and film-formation mechanism. Chapter 2 discusses the activated reactive evaporation process; the deposition of refractory compounds; the role of plasma in the process; and its applications. Chapter 3 focuses on ion-beam processing of optical thin films; ion sources and ion-surface interactions; and the different kinds of bombardment involved. Chapter 4 deals with laser induced etching - its mechanisms, methods, and applications. Chapter 5 talks about contacts to GaAs devices; Fermi-level pinning; and heterojunction contacts. The book is recommended for physicists and engineers in the field of electronics who would like to know more about thin films and the progresses in the field.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 13

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The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40° to 300°C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

Author: Joy George
Publisher: CRC Press
ISBN: 9780849306518
Category : Technology & Engineering
Languages : en
Pages : 394

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"Preparation of Thin Films provides a comprehensive account of various deposition techniques for the preparation of thin films of elements, compounds, alloys, ceramics, and semiconductors - emphasizing inorganic compound thin films and discussing high vacuum and chemical deposition methods used for preparing high temperature superconducting oxide thin films. "

Author: Klaus K. Schuegraf
Publisher: William Andrew
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 440

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Book Description
The most recent developments and techniques in thin film deposition for high technology applications are described by 23 authorities in the field.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

Author: Werner Kern
Publisher: Elsevier
ISBN: 0080524214
Category : Technology & Engineering
Languages : en
Pages : 881

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Book Description
This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. - Provides an all-new sequel to the 1978 classic, Thin Film Processes - Introduces new topics, and several key topics presented in the original volume are updated - Emphasizes practical applications of major thin film deposition and etching processes - Helps readers find the appropriate technology for a particular application

Author: Krishna Seshan
Publisher: CRC Press
ISBN: 1482269686
Category : Science
Languages : en
Pages : 72

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Book Description
The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and Applications, Second Edition explores the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition tec