Thermal Effects in the Operation of GaAs Transferred Electron Microwave Oscillators PDF Download
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Author: Joseph Stewart Bravman Publisher: ISBN: Category : Oscillators, Electric Languages : en Pages : 360
Book Description
A conceptually simple, three part methodology is applied to the understanding of thermal effects in GaAs transferred electron microwave oscillators. The results are experimentally based, but given theoretical support. The use of a basic thermal model composed of a series of lumped thermal resistances produces two important transient and steady-state temperatures; the temperature difference across the active layer, and the maximum active layer temperature. These are obtained from the input power and geometrical fabrication factors, and become the input parameters in a modification of the two-terminal device V-I characteristic. This characteristic is shown to be well described by three parameters which are obtained from an understanding of the internal diode physics. The parameters are the thermally modified peak and valley currents and low-field resistance of the diode structure. It will be shown that these three variables are sufficient to characterize the device, and when coupled to the RF circuit at the device-circuit interface, provide the desired knowledge of the observables of oscillator operation. These observables are peak and average power output, efficiency, frequency, stability, and a definition of the maximum bias and load. (Author).
Author: Joseph Stewart Bravman Publisher: ISBN: Category : Oscillators, Electric Languages : en Pages : 360
Book Description
A conceptually simple, three part methodology is applied to the understanding of thermal effects in GaAs transferred electron microwave oscillators. The results are experimentally based, but given theoretical support. The use of a basic thermal model composed of a series of lumped thermal resistances produces two important transient and steady-state temperatures; the temperature difference across the active layer, and the maximum active layer temperature. These are obtained from the input power and geometrical fabrication factors, and become the input parameters in a modification of the two-terminal device V-I characteristic. This characteristic is shown to be well described by three parameters which are obtained from an understanding of the internal diode physics. The parameters are the thermally modified peak and valley currents and low-field resistance of the diode structure. It will be shown that these three variables are sufficient to characterize the device, and when coupled to the RF circuit at the device-circuit interface, provide the desired knowledge of the observables of oscillator operation. These observables are peak and average power output, efficiency, frequency, stability, and a definition of the maximum bias and load. (Author).
Author: Publisher: ISBN: Category : Aeronautics Languages : en Pages : 602
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Michael S. Shur Publisher: Springer Science & Business Media ISBN: 1489919899 Category : Technology & Engineering Languages : en Pages : 677
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author: T.G. Roer Publisher: Springer Science & Business Media ISBN: 1461525004 Category : Technology & Engineering Languages : en Pages : 354
Book Description
This book deals with microwave electronics, that is to say those components of microwave circuits that generate, amplify, detect or modulate signals. It is based on a course given in the Electrical Engineering Department of Eindhoven University since 1985 and on about twenty years of experience in the microwave field. Somewhat to my surprise I found that there were hardly any textbooks that addressed the specific properties and demands of microwave devices, including vacuum devices and their interactions with circuits. Numerous books exist on semiconductor electronic devices, dealing in an excellent way with the basic device physics, but being somewhat brief on typical micro wave aspects. On the other hand there are also many books that concentrate on electromagnetic theory and passive circuits, treating devices without reference to the underlying physics. In between there are some entirely devoted to a particular device, for example, the GaAs MESFET. With regard to tubes the situation is even worse: books that treat the basic principles are usually quite old and modern books often concentrate on specific devices, like high power tubes. So it seems that there is room for a book like this one. Its aim is to provide an elementary understanding ofmicrowave electronic devices, both vacuum and semiconductor, on the one hand in relation to the basic physics underlying their operation and on the other in relation to their circuit applications.
Author: Marius Bazu Publisher: John Wiley & Sons ISBN: 1119990009 Category : Technology & Engineering Languages : en Pages : 372
Book Description
Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Author: G.W. Cullen Publisher: Springer Science & Business Media ISBN: 1461262674 Category : Technology & Engineering Languages : en Pages : 306
Book Description
Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.
Author: Joseph Stewart Bravman
Author: Joseph Stewart Bravman
Author: B. G. Bosch
Author: 
Author: G. S. Hobson
Author: Michael S. Shur
Author: Library of Congress. Copyright Office
Author: William L. Wilson
Author: T.G. Roer
Author: Marius Bazu
Author: G.W. Cullen