Author: Robert G. MorrisPublisher:
ISBN:
Category : Heat
Languages : en
Pages : 2
Book Description
Thermal Conductivity Measurements of Silicon from 680° to 1000°K
Author: Robert G. MorrisMeasurements of Thermal Conductivity of Silicon from 680 ̊K to 1000 ̊K
Author: Joel J. MartinThermal Conductivity of the Elements
Author: Cho Yen HoPublisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 818
Book Description
U.S. Government Research Reports
Author: Thermal Conductivity Measurements of Silicon from 30° to 450°
Author: Robert G. MorrisA System for Low-temperature Measurements of Thermal Conductivity: Measurements on Silicon from 770 to 3000K.
Author: Ronald J. HolyerPublisher:
ISBN:
Category : Low temperatures
Languages : en
Pages : 90
Book Description
Keywords Index to U.S. Government Technical Reports (permuted Title Index).
Author: United States. Department of Commerce. Office of Technical ServicesPublisher:
ISBN:
Category : Government publications
Languages : en
Pages : 860
Book Description
Keywords Index to U.S. Government Technical Reports
Author: Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 748
Book Description
A System for Low-temperature Measurements of Thermal Conductivity
Author: Ronald J. HolyerPublisher:
ISBN:
Category : Heat
Languages : en
Pages : 112
Book Description
A system has been designed and constructed to measure thermal conductivity by the series comparative method in the temperature range 4 to 300K. A sample temperature of 77K was reached when the cylindrical sample chamber 3-1/4 inches in diameter and 8-3/4 inches long was evacuated to a pressure of 0.000003 Torr and submerged in a bath of liquid nitrogen held in a 5-1/2 liter stainlesssteel dewar. Temperatures as low as 4.2K could be obtained if the sample chamber were submerged in liquid helium. Temperatures between that of the liquid bath and room temperature were obtained by electrical heating. A simple Wheatstone bridge circuit, one arm of which was a copper resistance thermometer made from 140 ohms of B and S No. 36 copper wire, served to regulate automatically the electrical heating so as to give a drift in sample temperature of less than 0.002 deg/min. Measurements were attempted from 77K to 300K on a sample of n-type single-crystal silicon with an impurity concentration of 5X10 to the 15th power cu cm. Armco iron was used as a standard. Temperatures were measured with copper vs constantan thermocouples. The thermal conductivity of the sample was found to range from 8.7 watt/cm-degK at 98K to 1.8 watt/cm-degK at 255K. These values agree with those of Carruthers et al. Within 7% and of Glassbrenner and Slack within 10%. (Author).
Thermal Conductivity Measurements of Summit Polycrystalline Silicon
Author: Jaron D. KuppersPublisher:
ISBN:
Category :
Languages : en
Pages : 48
Book Description
A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.