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Author: Chih-Tang Sah Publisher: World Scientific ISBN: 9789810216238 Category : Technology & Engineering Languages : en Pages : 456
Book Description
This companion to Fundamentals of Solid-State Electronics provides a helpful summary of the main text for students and lecturers alike. The clear typeface, large font, and point form layout, are designed to produce viewgraphs for lectures and to provide ample margins for study notes.This Study Guide comes complete with a detailed description of two one-semester solid-state electronics core courses, taught to about 80-100 sophomore-junior students each time, four years apart. It links the contents of the one-semester lecture course to the textbook.
Author: Chih-Tang Sah Publisher: World Scientific ISBN: 9789810216238 Category : Technology & Engineering Languages : en Pages : 456
Book Description
This companion to Fundamentals of Solid-State Electronics provides a helpful summary of the main text for students and lecturers alike. The clear typeface, large font, and point form layout, are designed to produce viewgraphs for lectures and to provide ample margins for study notes.This Study Guide comes complete with a detailed description of two one-semester solid-state electronics core courses, taught to about 80-100 sophomore-junior students each time, four years apart. It links the contents of the one-semester lecture course to the textbook.
Author: Chih-Tang Sah Publisher: World Scientific Publishing Company ISBN: 9813103043 Category : Technology & Engineering Languages : en Pages : 212
Book Description
This Solution Manual, a companion volume of the book, Fundamentals of Solid-State Electronics, provides the solutions to selected problems listed in the book. Most of the solutions are for the selected problems that had been assigned to the engineering undergraduate students who were taking an introductory device core course using this book. This Solution Manual also contains an extensive appendix which illustrates the application of the fundamentals to solutions of state-of-the-art transistor reliability problems which have been taught to advanced undergraduate and graduate students. This book is also available as a set with Fundamentals of Solid-State Electronics and Fundamentals of Solid-State Electronics — Study Guide.
Author: Chih Tang Sah Publisher: World Scientific Publishing Company ISBN: 9813103264 Category : Technology & Engineering Languages : en Pages : 456
Book Description
This companion to Fundamentals of Solid-State Electronics provides a helpful summary of the main text for students and lecturers alike. The clear typeface, large font, and point form layout, are designed to produce viewgraphs for lectures and to provide ample margins for study notes.This Study Guide comes complete with a detailed description of two one-semester solid-state electronics core courses, taught to about 80-100 sophomore-junior students each time, four years apart. It links the contents of the one-semester lecture course to the textbook.
Author: Samar K. Saha Publisher: CRC Press ISBN: 1351831070 Category : Technology & Engineering Languages : en Pages : 385
Book Description
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Author: Serge Oktyabrsky Publisher: Springer Science & Business Media ISBN: 1441915478 Category : Technology & Engineering Languages : en Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Yoshio Nishi Publisher: CRC Press ISBN: 1420017667 Category : Technology & Engineering Languages : en Pages : 1720
Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Author: Samar K. Saha Publisher: CRC Press ISBN: 0429998082 Category : Technology & Engineering Languages : en Pages : 283
Book Description
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
Author: Chih-Tang Sah
Author: Chih-Tang Sah
Author: 
Author: Chih-Tang Sah
Author: Chih Tang Sah
Author: 
Author: Samar K. Saha
Author: Geoffrey Todd Salbert
Author: Serge Oktyabrsky
Author: Yoshio Nishi
Author: Samar K. Saha