Author: Michael John McNuttPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 95
Book Description
Theory and Experiments on High Frequency Metal-oxide-semiconductor Capacitance
Author: Michael John McNuttPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 95
Book Description
Theory and Experiments of High Frequency Metal-oxide-semiconductor Capacitance
Author: Michael John McNuttScientific and Technical Aerospace Reports
Author: MOS (Metal Oxide Semiconductor) Physics and Technology
Author: E. H. NicollianPublisher: John Wiley & Sons
ISBN: 047143079X
Category : Technology & Engineering
Languages : en
Pages : 928
Book Description
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Annual Technical Report - Materials Research Laboratory, University of Illinois at Urbana-Champaign
Author: University of Illinois at Urbana-Champaign. Materials Research LaboratoryPublisher:
ISBN:
Category : Materials
Languages : en
Pages : 232
Book Description
Recent Awards in Engineering
Author: Fundamentals of Solid State Electronics
Author: Chih-Tang SahPublisher: World Scientific Publishing Company
ISBN: 9813103493
Category : Technology & Engineering
Languages : en
Pages : 1040
Book Description
This is perhaps the most comprehensive undergraduate textbook on the fundamental aspects of solid state electronics. It presents basic and state-of-the-art topics on materials physics, device physics, and basic circuit building blocks not covered by existing textbooks on the subject. Each topic is introduced with a historical background and motivations of device invention and circuit evolution. Fundamental physics is rigorously discussed with minimum need of tedious algebra and advanced mathematics. Another special feature is a systematic classification of fundamental mechanisms not found even in advanced texts. It bridges the gap between solid state device physics covered here with what students have learnt in their first two years of study. Used very successfully in a one-semester introductory core course for electrical and other engineering, materials science and physics junior students, the second part of each chapter is also used in an advanced undergraduate course on solid state devices. The inclusion of previously unavailable analyses of the basic transistor digital circuit building blocks and cells makes this an excellent reference for engineers to look up fundamental concepts and data, design formulae, and latest devices such as the GeSi heterostructure bipolar transistors. This book is also available as a set with Fundamentals of Solid-State Electronics — Study Guide and Fundamentals of Solid-State Electronics — Solution Manual.
Comprehensive Dissertation Index
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 914
Book Description
Government Reports Announcements
Author: Theory and Experiments on Large Signal Surface Transport in Metal Oxide Semiconductor Capacitors
Author: Allen Pang-I HoPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 172
Book Description