Theoretical Studies of Quantum Transport in Submicron Semiconductor Electronic Devices PDF Download

Author: George Neofotistos
Publisher:
ISBN:
Category : Quantum theory
Languages : en
Pages : 276

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Author: Wim Magnus
Publisher:
ISBN: 9783642561344
Category :
Languages : en
Pages : 292

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Book Description
The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices. Along the road, readers encounter landmarks in theoretical physics as the authors guide them through the strong and weak aspects of various hypotheses.

Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923829
Category : Technology & Engineering
Languages : en
Pages : 729

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Book Description
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Author: B. Kramer
Publisher: Springer Science & Business Media
ISBN: 9400917600
Category : Science
Languages : en
Pages : 382

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The articles in this book have been selected from the lectures of a NATO Advanced Study Institute held at Bad Lauterberg (Germany) in August 1995. Internationally well-known researchers in the field of mesoscopic quantum physics provide insight into the fundamental physics underlying the mesoscopic transport phenomena in structured semiconductor inversion layers. In addition, some of the most recent achievements are reported in contributed papers. The aim of the volume is not to give an overview over the field. Instead, emphasis is on interaction and correlation phenomena that turn out to be of increasing importance for the understanding of the phenomena in the quantum Hall regime, and in the transport through quantum dots. The present status of the quantum Hall experiments and theory is reviewed. As a "key example" for non-Fermi liquid behavior the Luttinger liquid is introduced, including some of the most recent developments. It is not only of importance for the fractional quantum Hall effect, but also for the understanding of transport in quantum wires. Furthermore, the chaotic and the correlation aspects of the transport in quantum dot systems are described. The status of the experimental work in the area of persistent currents in semiconductor systems is outlined. The construction of one of the first single-electron transistors is reported. The theoretical approach to mesoscopic transport, presently a most active area, is treated, and some aspects of time-dependent transport phenomena are also discussed.

Author: Pratik B. Vyas
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages :

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Semiconductor devices have transformed the world through tremendous technological advances in all aspects of life imaginable. An important aspect of the research into improving these devices is computer-aided simulation and modeling of their electrical behavior. The ability to study theoretically semiconductor devices allows us to predict their behavior as well as optimize their performance before having to physically fabricate the device, saving us money and time. To this end, we have developed a novel approach, based on the effective mass approximation, to study theoretically quantum transport, both ballistic and dissipative, in realistic semiconductor devices. Our model takes into account quantum confinement and other non-local quantum effects affecting electronic transport in the current and near future generations of transistors. As an example of application, we have studied the electrical behavior of well-known silicon field-effect transistors (FETs) and the factors affecting their performance.

Author: Christopher M Snowden
Publisher: World Scientific
ISBN: 9814507911
Category : Science
Languages : en
Pages : 240

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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1489923594
Category : Science
Languages : en
Pages : 311

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Book Description
The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

Author: Lauren C. Post
Publisher:
ISBN:
Category : Agriculture
Languages : en
Pages : 12

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Author: Thomas Ihn
Publisher: Springer
ISBN: 0387218289
Category : Science
Languages : en
Pages : 270

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Book Description
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.

Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1461532841
Category : Science
Languages : en
Pages : 409

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Book Description
The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.