Author: Sheng S. LiPublisher:
ISBN:
Category : Holes (Electron deficiencies)
Languages : en
Pages : 56
Book Description
The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Holes (Electron deficiencies)
Languages : en
Pages : 56
Book Description
The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Holes (Electron deficiencies).
Languages : en
Pages : 0
Book Description
The Thoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon
Author: Sheng S. LiNBS Special Publication
Author: Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 926
Book Description
The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-doped Silicon
Author: Publications
Author: United States. National Bureau of StandardsPublisher:
ISBN:
Category : Government publications
Languages : en
Pages : 668
Book Description
Publications of the National Institute of Standards and Technology ... Catalog
Author: National Institute of Standards and Technology (U.S.)Publisher:
ISBN:
Category :
Languages : en
Pages : 648
Book Description
Publications of the National Bureau of Standards, 1979 Catalog
Author: United States. National Bureau of StandardsPublisher:
ISBN:
Category : Government publications
Languages : en
Pages : 650
Book Description
Publications of the National Bureau of Standards ... Catalog
Author: United States. National Bureau of StandardsPublisher:
ISBN:
Category : Government publications
Languages : en
Pages : 668
Book Description
Author: