Author: Publisher:
ISBN:
Category : Boron
Languages : en
Pages : 60
Book Description
The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-doped Silicon
Author: The relationship between resistivity and dopant density for phosphorus- and boron-doped silicon
Author: W. Robert ThurberThe Relationship Between Resistivity and Dopant Density for Phosphorus-and Boron-doped Silicon
Author: US Department of commerce. National Bureau of StandardsPublisher:
ISBN:
Category : Silicon
Languages : en
Pages : 47
Book Description
The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-doped Silicon
Author: The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Holes (Electron deficiencies)
Languages : en
Pages : 56
Book Description
Semiconductor Measurement Technology
Author: W. R. ThurberThe Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N-type Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 44
Book Description
Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon Withdrawn 2003
Author: The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Holes (Electron deficiencies).
Languages : en
Pages : 0
Book Description
Author: