Author: David A. BrassPublisher:
ISBN:
Category :
Languages : en
Pages : 189
Book Description
The Production of Epitaxial Silicon Wafers Via Plasma Enhanced Chemical Vapor Deposition
Author: David A. BrassThe Production of Epitaxial Silicon Wafers by Thermal Chemical Vapor Deposition
Author: Adam GuthornMicrostructural characterization of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition
Author: Ting-Chen HsuPublisher:
ISBN:
Category : Microstructure
Languages : en
Pages : 230
Book Description
Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition).
Author: L. R. ReifPublisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).
Plasma Enhanced Chemical Vapor Deposition of Silicon Epitaxial Layers
Author: Rafael ReifPublisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages : 13
Book Description
Plasma Enhanced Chemical Vapor Deposition of In-situ Doped Epitaxial Silicon from Silane at Low Temperatures
Author: James Hartfiel ComfortPublisher:
ISBN:
Category :
Languages : en
Pages : 352
Book Description
Characterization of the electrical properties of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition
Author: Rajan SharmaEpitaxial Growth of Silicon and Erbium Doped Silicon by Plasma Enhanced Chemical Vapor Deposition
Author: Matthew W. DemingPublisher:
ISBN:
Category : Erbium
Languages : en
Pages : 170
Book Description
Device Performance in Epitaxial Silicon Deposited at Low Temperatures by Plasma-enhanced Chemical Vapor Deposition
Author: W. R. BurgerSilicon Epitaxy
Author: Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.