Author: Publisher:
ISBN:
Category : Science
Languages : en
Pages : 828
Book Description
Technical Abstract Bulletin
Author: U.S. Government Research & Development Reports
Author: U.S. Government Research Reports
Author: Air Force Research Resumés
Author: Scientific and Technical Aerospace Reports
Author: Transactions of the American Institute of Mining, Metallurgical and Petroleum Engineers
Author: American Institute of Mining, Metallurgical, and Petroleum EngineersPublisher:
ISBN:
Category : Mineral industries
Languages : en
Pages : 1282
Book Description
Some vols., 1920-1949, contain collections of papers according to subject.
The Physics and Chemistry of Carbides, Nitrides and Borides
Author: R. FreerPublisher: Springer Science & Business Media
ISBN: 9400921012
Category : Technology & Engineering
Languages : en
Pages : 716
Book Description
Carbides, nitrides and borides are families of related refractory materials. Traditionally they have been employed in applications associated with engineering ceramics where either high temperature strength or stability is of primary importance. In recent years there has been a growing awareness of the interesting electrical, thermal and optical properties exhibited by these materials, and the fact that many can be prepared as monolithic ceramics, single crystals and thin films. In practical terms carbides, nitrides and borides offer the prospect of a new generation of semiconductor materials, for example, which can function at very high temperatures in severe environmental conditions. However, as yet, we have only a limited understanding of the detailed physics and chemistry of the materials and how the preparation techniques influence the properties. Under the auspices of the NATO Science Committee an Advanced Research Workshop (ARW) was held on the Physics and Chemistry of Carbides, Nitrides and Borides (University of Manchester, 18-22 September, 1989) in order to assess progress to date and identify the most promising themes and materials for future research. An international group of 38 scientists considered developments in 5 main areas: The preparation of powders, monolithic ceramics, single crystals and thin films; Phase transformations, microstructure, defect structure and mass transport; Materials stability; Theoretical studies; Electrical, thermal and optical properties of bulk materials and thin films.
Ceramics Science and Technology, Volume 4
Author: Ralf RiedelPublisher: John Wiley & Sons
ISBN: 3527676732
Category : Technology & Engineering
Languages : en
Pages : 507
Book Description
Although ceramics have been known to mankind literally for millennia, research has never ceased. Apart from the classic uses as a bulk material in pottery, construction, and decoration, the latter half of the twentieth century saw an explosive growth of application fields, such as electrical and thermal insulators, wear-resistant bearings, surface coatings, lightweight armour, and aerospace materials. In addition to plain, hard solids, modern ceramics come in many new guises such as fabrics, ultrathin films, microstructures and hybrid composites. Built on the solid foundations laid down by the 20-volume series Materials Science and Technology, Ceramics Science and Technology picks out this exciting material class and illuminates it from all sides. Materials scientists, engineers, chemists, biochemists, physicists and medical researchers alike will fi nd this work a treasure trove for a wide range of ceramics knowledge from theory and fundamentals to practical approaches and problem solutions.
Silicon Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351085077
Category : Technology & Engineering
Languages : en
Pages : 306
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
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