The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation PDF Download

Author: Mahdi Pourfath
Publisher: Springer
ISBN: 370911800X
Category : Technology & Engineering
Languages : en
Pages : 268

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Book Description
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.

Author: Gianluca Stefanucci
Publisher: Cambridge University Press
ISBN: 1107354579
Category : Science
Languages : en
Pages : 619

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Book Description
The Green's function method is one of the most powerful and versatile formalisms in physics, and its nonequilibrium version has proved invaluable in many research fields. This book provides a unique, self-contained introduction to nonequilibrium many-body theory. Starting with basic quantum mechanics, the authors introduce the equilibrium and nonequilibrium Green's function formalisms within a unified framework called the contour formalism. The physical content of the contour Green's functions and the diagrammatic expansions are explained with a focus on the time-dependent aspect. Every result is derived step-by-step, critically discussed and then applied to different physical systems, ranging from molecules and nanostructures to metals and insulators. With an abundance of illustrative examples, this accessible book is ideal for graduate students and researchers who are interested in excited state properties of matter and nonequilibrium physics.

Author: Vinod Kumar Khanna
Publisher: CRC Press
ISBN: 1351204653
Category : Science
Languages : en
Pages : 753

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Book Description
This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter. Introduces the basic concepts underlying the operation of nanoelectronic devices. Offers a broad overview of the field, including state-of-the-art developments. Covers the relevant quantum and solid-state physics and nanoelectronic device principles. Written in lucid language with accessible mathematical treatment. Includes extensive end-of-chapter exercises and many insightful diagrams.

Author: Neophytos Neophytou
Publisher: Springer Nature
ISBN: 3030386813
Category : Technology & Engineering
Languages : en
Pages : 97

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Book Description
This book introduces readers to state-of-the-art theoretical and simulation techniques for determining transport in complex band structure materials and nanostructured-geometry materials, linking the techniques developed by the electronic transport community to the materials science community. Starting from the semi-classical Boltzmann Transport Equation method for complex band structure materials, then moving on to Monte Carlo and fully quantum mechanical models for nanostructured materials, the book addresses the theory and computational complexities of each method, as well as their advantages and capabilities. Presented in language that is accessible to junior computational scientists, while including enough detail and depth with regards to numerical implementation to tackle modern research problems, it offers a valuable resource for computational scientists and postgraduate researchers whose work involves the theory and simulation of electro-thermal transport in advanced materials.

Author: Mark Lundstrom
Publisher: Springer Science & Business Media
ISBN: 0387280030
Category : Technology & Engineering
Languages : en
Pages : 223

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Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Author: Joachim Piprek
Publisher: CRC Press
ISBN: 149874947X
Category : Science
Languages : en
Pages : 835

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Book Description
• Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.

Author: Supriyo Datta
Publisher: Cambridge University Press
ISBN: 1139643010
Category : Science
Languages : en
Pages : 398

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Book Description
Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.

Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680

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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Author: Supriyo Datta
Publisher: Cambridge University Press
ISBN: 1139443240
Category : Technology & Engineering
Languages : en
Pages : 434

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Book Description
This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.

Author: Eleftherios N. Economou
Publisher: Springer Science & Business Media
ISBN: 3662023695
Category : Science
Languages : en
Pages : 325

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Book Description
In this edition the second and main part of the book has been considerably expanded as to cover important applications of the formalism. In Chap.5 a section was added outlining the extensive role of the tight binding (or equivalently the linear combination of atomic-like orbitals) approach to many branches of solid-state physics. Some additional informa tion (including a table of numerical values) regarding square and cubic lattice Green's functions were incorporated. In Chap.6 the difficult subjects of superconductivity and the Kondo effect are examined by employing an appealingly simple connection to the question of the existence of a bound state in a very shallow potential well. The existence of such a bound state depends entirely on the form of the un perturbed density of states near the end of the spectrum: if the density of states blows up there is always at least one bound state. If the density of states approaches zero continuously, a critical depth (and/or width) of the well must be reached in order to have a bound state. The borderline case of a finite discontinuity (which is very important to superconductivity and the Kondo effect) always produces a bound state with an exponentially small binding energy.