Author: Choongun KimPublisher:
ISBN:
Category :
Languages : en
Pages : 464
Book Description
The Microstructural Mechanism of Electromigration Failure in Narrow Interconnects of A1 Alloys
Author: Choongun KimThe Microstructural Mechanism of Electromigration Failure in Narrow Interconnects of Al Alloys
Author: Effects of Microstructural Control on the Failure Kinetics and the Reliability Improvement of Al and Al-alloy Interconnects
Author: Seung Hyuk KangMicrostructure and Electromigration Effects in A1 and A1 Alloy Thin Films
Author: John Espinoza Sanchez (Jr)Publisher:
ISBN:
Category :
Languages : en
Pages : 276
Book Description
Evolving Microstructure
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
We report on a collective body of work wherein we have studied the mass transport phenomena which are likely to be operative during stress driven changes in microstructure arising from electromigration and stress voiding. Our goal is to understand such microstructural evolution leading to failure of the metal lines or interconnects associated with integrated electronic circuits or chips. This work, when complete, will lead to improved electronics performance and reliability and faster product development arising from accurate and predictive models of wearout phenomena. We report on the role of thermal induced strain leading to hole and hillock formation, the influence of grains structure on the reliability of Al- based interconnects, and the observation of counter-current electromigration of Ua in Al grain boundaries.
RLE Progress Report
Author: Massachusetts Institute of Technology. Research Laboratory of ElectronicsPublisher:
ISBN:
Category : Electronics
Languages : en
Pages : 304
Book Description
Physics Briefs
Author: Power Distribution Networks in High Speed Integrated Circuits
Author: Andrey MezhibaPublisher: Springer Science & Business Media
ISBN: 146150399X
Category : Technology & Engineering
Languages : en
Pages : 287
Book Description
Distributing power in high speed, high complexity integrated circuits has become a challenging task as power levels exceeding tens of watts have become commonplace while the power supply is plunging toward one volt. This book is dedicated to this important subject. The primary purpose of this monograph is to provide insight and intuition into the behavior and design of power distribution systems for high speed, high complexity integrated circuits.
3D Microelectronic Packaging
Author: Yan LiPublisher: Springer Nature
ISBN: 9811570906
Category : Technology & Engineering
Languages : en
Pages : 629
Book Description
This book offers a comprehensive reference guide for graduate students and professionals in both academia and industry, covering the fundamentals, architecture, processing details, and applications of 3D microelectronic packaging. It provides readers an in-depth understanding of the latest research and development findings regarding this key industry trend, including TSV, die processing, micro-bumps for LMI and MMI, direct bonding and advanced materials, as well as quality, reliability, fault isolation, and failure analysis for 3D microelectronic packages. Images, tables, and didactic schematics are used to illustrate and elaborate on the concepts discussed. Readers will gain a general grasp of 3D packaging, quality and reliability concerns, and common causes of failure, and will be introduced to developing areas and remaining gaps in 3D packaging that can help inspire future research and development.
Electromigration in ULSI Interconnections
Author: Cher Ming TanPublisher: World Scientific
ISBN: 9814273325
Category : Technology & Engineering
Languages : en
Pages : 312
Book Description
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.