Author: Margaret FolkardPublisher:
ISBN: 9780642898739
Category : Gallium arsenide
Languages : en
Pages : 14
Book Description
The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret FolkardPublisher:
ISBN: 9780642898739
Category : Gallium arsenide
Languages : en
Pages : 14
Book Description
Scientific and Technical Aerospace Reports
Author: Technical Abstract Bulletin
Author: Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret FolkardPublisher:
ISBN: 9780642898746
Category : Gallium arsenide
Languages : en
Pages : 25
Book Description
R & D Abstracts
Author: Technology Reports Centre (Great Britain)Publisher:
ISBN:
Category :
Languages : en
Pages : 512
Book Description
Recent Advances in the Growth of Epitaxial Gallium Arsenide
Author: Kenneth L. KlohnPublisher:
ISBN:
Category :
Languages : en
Pages : 43
Book Description
This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).
Crystal Growth Bibliography
Author: Publisher: Springer Nature
ISBN: 1461596181
Category :
Languages : en
Pages : 270
Book Description
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
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