Author: Standen Nigel DouglasPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 162
Book Description
The Liquid Phase Epitaxial Growth Of Gallium Arsenide And Aluminium Gallium Arsenide For Double Heterostructure Laser Diodes
Author: Standen Nigel DouglasPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 162
Book Description
The Fabrication of Double Heterostructure Aluminum Gallium Arsenide/gallium Arsenide Lasers by Molecular Beam Epitaxy
Author: Timothy James DrummondPublisher:
ISBN:
Category :
Languages : en
Pages : 58
Book Description
Today there exists a need to be able to process increasing amounts of data at rates beyond the capabilities of existing purely electrical networks. To meet this need, networks which transmit data via an optical carrier rather than an electrical one are being developed. A necessary component of an optical network is a small, easily modulated source of coherent light. The only such source available is a laser diode. The first laser diode to operate continuously at room temperature was a double heterostructure (DH) (Al, Ga)As/GaAs laser prepared by liquid phase epitaxy (LPE). Much effort was subsequently devoted to reproducing those results by molecular beam epitaxy (MBE). MBE offers several advantages over LPE, such as control of composition and impurity profiles to atomic dimensions. Layers cna be grown on larger substrates and with a high degree of uniformity and reproducibility that is not possible with LPE. Despite these advantages, it was six years after the first continuous room temperature operation of an (Al, Ga)As/GaAs DH laser that a similar laser prepared by MBE was reported. The first MBE lasers typically had threshold current densities, Jth, about twice as large as similarly designed LPE lasers. Another three years passed before the art of MBE advanced to the point where it became possible to achieve laser performance equal to the LPE lasers. The presence of non-radiative recombination centers in the bulk (Al, Ga)As layers was shown to make a significant contribution to the high threshold current densities in MBE lasers.
Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret FolkardPublisher:
ISBN: 9780642898746
Category : Gallium arsenide
Languages : en
Pages : 25
Book Description
Scientific and Technical Aerospace Reports
Author: Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition
Author: Vilnis Guntis KreismanisPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 352
Book Description
Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications,
Author: M. G. AstlesPublisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 240
Book Description
An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Nuclear Science Abstracts
Author: Scientific and Technical Aerospace Reports
Author: The Liquid Phase Epitaxial Growth of Aluminum Gallium Arsenide Avalanche Photodiodes
Author: Stephen Charles SmithPublisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.