Author: Gert I. AnderssonPublisher:
ISBN: 9789170326752
Category : Semiconductors
Languages : en
Pages : 66
Book Description
The influence of process induced defects on electrical properties of silicon junctions
Author: Gert I. AnderssonPublisher:
ISBN: 9789170326752
Category : Semiconductors
Languages : en
Pages : 66
Book Description
Influence of Dynamic Strain on Silicon Junctions
Author: J. J. WortmanPublisher:
ISBN:
Category :
Languages : en
Pages : 87
Book Description
The effect of large strains on the electrical properties of p-n junctions was studied by electromagnetically driving with a sinusoidal force a cantilevered silicon beam into which the junctions are diffused. Stress levels greater than 10 to the 9th power dynes/sq cm was obtained at the natural resonant frequency of the beam (typically 200 Hz). An asymmetry was observed in the junction current which shows clearly a difference in response to compressive and tensile forces. With increasing compressive forces the usual increase in junction current was observed. In tension, however, an increasing force first resulted in a decreasing current then an increasing current. No first order influences of time dependent lifetime effects or reversible defect creation in the junctions were observable. These observations are correlated with a theoretical model for the piezojunction effect based on stress induced changes in the energy band structure of the material. (Author).
Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices
Author: Jo NijsPublisher: CRC Press
ISBN: 1000445062
Category : Science
Languages : en
Pages : 488
Book Description
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Electrical Characterization of Silicon-on-Insulator Materials and Devices
Author: Sorin CristoloveanuPublisher: Springer Science & Business Media
ISBN: 1461522455
Category : Technology & Engineering
Languages : en
Pages : 389
Book Description
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Energy Research Abstracts
Author: Scientific and Technical Aerospace Reports
Author: Government Reports Announcements & Index
Author: An Introductory Guide to EC Competition Law and Practice
Author: Valentine KorahPublisher:
ISBN:
Category : Antitrust law
Languages : en
Pages : 2354
Book Description
Light-Induced Defects in Semiconductors
Author: Kazuo MorigakiPublisher: CRC Press
ISBN: 9814411485
Category : Science
Languages : en
Pages : 213
Book Description
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description