Author: Donald J. DelehantyPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The Growth Rate of SiO(sub 2) Films in Dry Thermal Oxidation and Effects of Annealing Using Ellipsometry
Author: Donald J. DelehantyGrowth Kinetics of SiO(sub 2) and the Ellipsometric Study of SiO(sub 2) Films on Silicon
Author: Shou-Chen KaoSi/SiO2 Interfere Studies by Immersion Ellipsometry
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 8
Book Description
The mechanisms associated with Si/SiO2 interface annealing and Thermal oxidation conditions were studied by spectroscopic immersion ellipsometry. Essentially, this surface sensitive ellipsometry technique uses liquids that refractive index match with the films, thereby optically removing the films. With the use of an optical model, it is shown that at annealing temperatures viscous relaxation dominates, while at low annealing temperatures the suboxide reduction is apparent. It is also shown that with the thickening SiO2 Overlayer, the thickness of the suboxide layer at the interface increases and the average radius of the crystalline silicon protrusions decreases for the three different orientation studied. These results are consistent with the commonly accepted Si oxidation model ... Spectroscopic immersion ellipsometry.
Structural and Interfacial Characteristics of Thin ([10 Nm) SiO Sub 2 Films Grown by Electron Cyclotron Resonance Plasma Oxidation on (100) Si Substrates
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
The feasibility of fabricating ultra-thin SiO2 films on the order of a few nanometer thickness has been demonstrated. SiO2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on (100) Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the (100) substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve.
Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
Government Reports Announcements & Index
Author: Metallization
Author: S. P. MurarkaPublisher: Butterworth-Heinemann
ISBN:
Category : Computers
Languages : en
Pages : 268
Book Description
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
Fundamentals of III-V Semiconductor MOSFETs
Author: Serge OktyabrskyPublisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Electrochemistry of Zirconia Gas Sensors
Author: Serge ZhuiykovPublisher: CRC Press
ISBN: 1420047620
Category : Science
Languages : en
Pages : 289
Book Description
The first book to present a detailed analysis of the electrochemistry, development, modeling, optimization, testing, and technology behind modern zirconia-based sensors, Electrochemistry of Zirconia Gas Sensors explores how to tailor these sensors to meet specific industrial needs. The book addresses a range of different stages of development in zi
Materials for Information Technology
Author: Ehrenfried ZschechPublisher: Springer Science & Business Media
ISBN: 1846282357
Category : Technology & Engineering
Languages : en
Pages : 498
Book Description
This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.