Author: Adrian Chanchall ToyPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 110
Book Description
The Growth and Characterization of Gallium Arsenide Thin Films by Molecular Beam Epitaxy
Author: Adrian Chanchall ToyPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 110
Book Description
Growth and Characterization of Beta-gallium Oxide Thin Films Using Plasma-assisted Molecular Beam Epitaxy
Author: Kasra PourangThe Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon
Author: David Andrew WoolfThe Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Author: David Ian WestwoodMolecular Beam Epitaxy Growth and Characterization of Dysprosium Phosphide and Dysprosium Arsenide on Gallium Arsenide and Gallium Phosphide
Author: Paul Piyawong LeePublisher:
ISBN:
Category : Dysprosium
Languages : en
Pages : 296
Book Description
Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
Author: Growth and Characterization of Molecular Beam Epitaxial Gallium Arsenide Antimonide and Gallium Antimonide Gallium Arsenide Superlattices
Author: John Frederick KlemMolecular Beam Epitaxial Growth and Characterization of Indium Antimonide on Gallium Arsenide
Author: Jen-Inn ChyiPublisher:
ISBN:
Category :
Languages : en
Pages : 198
Book Description
Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$spcirc$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers. Indium antimonide p$sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally.
Growth and Characterization of Indium Gallium Phosphide on Gallium Arsenide by Gas Source Molecular Beam Epitaxy System and Its Applications to Heterostructures
Author: Dhrubes BiswasPublisher:
ISBN:
Category :
Languages : en
Pages : 192
Book Description
InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown. Samples studied were grown on (100) GaAs substrates under various growth conditions. Reproducible growth conditions have been established with respect to optimisation of pressure and temperature so as to achieve good material properties. Structural characterization using X ray has been carried out for the determination of material composition and evaluation of crystal quality. Very narrow full width at half maxima values indicated good crystal quality. Additionally, cross-sectional TEM has shown smooth heterointerface. Subsequent to this, good hall mobility at room temperature and at 77K, confirmed the material quality. Photoluminescence has been utilized for the evaluation of the E$\sb0$ gap. The PL exhibited very narrow full width at half maxima for lattice matched composition. Apart from evaluation of the E$\sb1$ gap, spectroscopic ellipsometry has been used to investigate the compositional dependence of the E$\sb1$ gap (and its broadening). P-type modulation doped heterostructures has been implemented using InGaP/GaAs, demonstrating two dimensional hole gas (2DHG) with good p-type hole mobilities measured from room temperature up to very low temperatures. The approximate constant value of mobility in the low temperature region strongly confirms the presence of 2DHG. A simple model has been formulated for the estimation of valence band discontinuity from the measured 2DHG data at cryogenic temperatures. Heterostructure Bipolar Transistor has been demonstrated using InGaP/GaAs system with the realisation of good current gain and low offset voltages. The double heterostructure bipolar transistor showed even smaller offset voltages. The classical V$\sb{CE}$ versus I$\sb{c}$ plots and gummel plots for the devices shows an ideality factor close to unity for I$\sb{c}$ and other usual characteristic features.
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