Author: James Richard ShealyPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 548
Book Description
The Growth and Characterization of GaAs, AlGaAs and Their Heterostructures by Organometallic Vapor Phase Epitaxy
Author: James Richard ShealyPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 548
Book Description
Organometallic Vapor Phase Epitaxial Growth and Characterization of AlGaInP for Visible Emitters
Author: David Paul BourPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 378
Book Description
OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces
Author: David Todd EmersonPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 808
Book Description
Solar Energy Update
Author: An Inverted AlGaAs
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 74
Book Description
This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 712
Book Description
Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition
Author: Vilnis Guntis KreismanisPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 352
Book Description
Author: Yoshihiro Kawase
Author: 
Author: