![The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor PDF](https://books.google.com/books/content/images/frontcover/GZ9RNwAACAAJ?fife=w80-h100)
Author: Kenneth George IrvinePublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George IrvinePublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George IrvinePublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
The Influence of Annealing on Thin Films of Beta SiC
Author: Irvin BermanPublisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 24
Book Description
Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.
Growth and Characterization of Silicon Carbide Thin Films and Nanowires
Author: Lunet Estefany LunaPublisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. In terms of high-temperature microdevices, maintaining low-resistance electrical contact between metal and SiC remains a challenge. Although SiC itself maintains structural and electrical stability at high temperatures, the metallization schemes on SiC can suffer from silicide formation and oxidation when exposed to air. The second chapter presents efforts to develop stable metallization schemes to SiC. A stack consisting of Ni-induced solid-state graphitization of SiC and an atomic layer deposited layer of alumina is shown to yield low contact resistivity of Pt/Ti to polycrystalline n-type 3C-SiC films that is stable in air at 450 oC for 500 hours. The subsequent chapters focus on the growth and structural characterization of SiC nanowires. In addition to its structural stability in harsh-environments, there is interest in controlling SiC crystal structure or polytype formation. Over 200 different polytypes have been reported for SiC, with the most common being 3C, 4H, and 2H. In terms of SiC nanowire growth, the 3C or cubic phase is the most prevalent. However, as the stacking fault energy for SiC is on the order of a few meV, it is common to have a high density of stacking faults within a given SiC crystal structure. Thus, to enable reliable performance of SiC nanowires, a growth method that can promote a specific polytype or reduce stacking faults is of importance. Ni-catalyzed chemical vapor deposition method is employed for the growth of the nanowires. The effects of substrate structure and quality as well as the various growth parameters such as temperature, pressure, and post-deposition annealing are investigated. Most significant has been the growth and characterization of vertically aligned hexagonal phase (or 4H-like) SiC nanowires grown on commercially available 4H-SiC (0001). The studies presented in this thesis tackle issues in SiC metallization and nanowire growth in efforts to expand the versatility of SiC as a material platform for novel devices.
Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro- and Nano-electromechanical Systems
Author: Christopher Stephen RoperPublisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Single Crystal Epitaxy and Characterization of Beta-Silicon Carbide
Author: Robert F. DavisPublisher:
ISBN:
Category :
Languages : en
Pages : 33
Book Description
The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Nucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition
![Nucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition PDF](https://books.google.com/books/content/images/frontcover/TWLutgAACAAJ?fife=w80-h100)
Author: JiPing LiElectron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates
Author: Joseph J. ComerPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 30
Book Description
Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Growth and Characterization of Beta-silicon Carbide Thin Films
Author: Bagher BahavarPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 308
Book Description
Author: Hua-shuang Kong