The Gettering of Metals in Silicon to Defects Induced by Ion Implantation PDF Download

Author: Yin-Yin Jennifer Wong Leung
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 274

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Author: Billy Crowder
Publisher: Springer Science & Business Media
ISBN: 146842064X
Category : Science
Languages : en
Pages : 644

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Book Description
During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.

Author: C.A.J. Ammerlaan
Publisher: Elsevier
ISBN: 0080983642
Category : Technology & Engineering
Languages : en
Pages : 518

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Book Description
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.

Author: Hing Wong
Publisher:
ISBN:
Category :
Languages : en
Pages : 380

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Author: Cor Claeys
Publisher: Springer
ISBN: 3319939254
Category : Technology & Engineering
Languages : en
Pages : 464

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Book Description
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335

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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Author: Patrick Whiting
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 234

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"Ion cutting achieved by the implantation of hydrogen or the co-implantation of hydrogen and helium is among the most common methods for the formation of Silicon on Insulator (SOI) structures used in the semiconductor industry. In this method, hydrogen is implanted into silicon at a high fluence and is heated in order to induce an exfoliation event. During this exfoliation event, a silicon wafer is cleaved along the depth at which the maximum damage concentration occurs, and the cleaved material bonds chemically to any underlying material being used as a handle substrate. The ion implantation process induces a variety of defect species which evolve as they are annealed at varying temperatures and times and the characteristics of these defects and the reactions which dominate their formation are critical for low temperature substrates such as LCD glass. This study observes the annealing characteristics of a variety of structural and electronic defects induced by ion implantation, including hydrogen decorated monovacancies and hydrogen decorated interstitials. The states arising from these decorated point defects were analyzed using Multiple Internal Transmission Infrared Spectroscopy (MIT-IR) and Deep Level Transient Spectroscopy (DLTS). A method for observing implant-relate defects on a MOS Capacitor using a DLTS measurement was developed. A new method for extracting the activation energy and the capture cross section of states observed with DLTS through the use of the Full Width at "Nth" Maximum was also developed. MIT-IR spectra resulting from ion implantation were analyzed using a novel method to extract the activation energy, reaction velocity and order of a solid state reaction, termed Kinetic Differential Analysis. Analysis using the methods described above allowed for the identification of five trap energy levels associated with hydrogen ion implantation which were tentatively assigned to VH2 (.15eV) VH3 (~.54eV) and IHx (.16eV and .19eV) defects. Kinetic Differential Analysis of MIT-IR spectra has identified reaction pathways associated with the 'decay' of decorated monovacancy defects. These chemical reactions have kinetic reaction orders of approximately 1.5, indicating a secondary reaction which contributes to the decay as well as some general interaction between reactants during the decay process."--Abstract.

Author: Paul Siffert
Publisher: Springer Science & Business Media
ISBN: 3662098970
Category : Technology & Engineering
Languages : en
Pages : 552

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Book Description
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.

Author: S. Coffa
Publisher: Newnes
ISBN: 044459972X
Category : Science
Languages : en
Pages : 1031

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Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Author: W. Murray Bullis
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 716

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