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Author: V. I. Talanin Publisher: Cambridge Scholars Publishing ISBN: 152752342X Category : Science Languages : en Pages : 281
Book Description
Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Author: V. I. Talanin Publisher: Cambridge Scholars Publishing ISBN: 152752342X Category : Science Languages : en Pages : 281
Book Description
Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Author: Fumio Shimura Publisher: Elsevier ISBN: 0323150489 Category : Technology & Engineering Languages : en Pages : 435
Book Description
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Author: Publisher: Newnes ISBN: 0080932282 Category : Science Languages : en Pages : 3572
Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author: American Association for Crystal Growth (AACG) Publisher: Coe Truman International, LLC ISBN: 1613300085 Category : Medical Languages : en Pages : 208
Book Description
A collection of abstracts for the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electronic Materials Symposium.
Author: Matthew D. McCluskey Publisher: CRC Press ISBN: 1351977989 Category : Science Languages : en Pages : 373
Book Description
Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ―Materials Today "... well written, with clear, lucid explanations ..." ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Author: E. Kasper Publisher: CRC Press ISBN: 1351085077 Category : Technology & Engineering Languages : en Pages : 306
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Victor A. Perevostchikov Publisher: Springer Science & Business Media ISBN: 3540294996 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Author: Ilya Obodovskiy Publisher: Elsevier ISBN: 0444639861 Category : Science Languages : en Pages : 722
Book Description
The author is ready to assert that practically none of the readers of this book will ever happen to deal with large doses of radiation. But the author, without a shadow of a doubt, claims that any readers of this book, regardless of gender, age, financial situation, type of professional activity, and habits, are actually exposed to low doses of radiation throughout their life. This book is devoted to the effect of small doses on the body. To understand the basic effects of radiation on humans, the book contains the necessary information from an atomic, molecular and nuclear physics, as well as from biochemistry and biology. Special attention is paid to the issues that are either not considered or discussed very briefly in existing literature. Examples include the ionization of inner atomic shells that play an essential role in radiological processes, and the questions of transformation of the energy of ionizing radiation in matter. The benefits of ionizing radiation to mankind is reflected in a wide range of radiation technologies used in science, industry, agriculture, culture, art, forensics, and, what is the most important application, medicine. Radiation: Fundamentals, Applications, Risks and Safety provides information on the use of radiation in modern life, its usefulness and indispensability. Experiments on the effects of small doses on bacteria, fungi, algae, insects, plants and animals are described. Human medical experiments are inhuman and ethically flawed. However, during the familiarity of mankind with ionizing radiation, a large number of population groups were subject to accumulation, exposed to radiation at doses of small but exceeding the natural background radiation. This book analyzes existing, real-life radiation results from survivors of Hiroshima and Nagasaki, Chernobyl and Fukushima, and examines studies of radiation effect on patients, radiologists, crews of long-distant flights and astronauts, on miners of uranium copies, on workers of nuclear industry and on militaries, exposed to ionizing radiation on a professional basis, and on the population of the various countries receiving environmental exposure. The author hopes that this book can mitigate the impact of radiation phobia, which prevails in the public consciousness over the last half century. - Explores the science of radiation and the effects of radiation technologies and biological processes - Analyzes the elementary processes of ionization and excitation - Summarizes information about inner shells ionization and its impact on matter and biological structures - Discusses quantum concepts in biology and clarifies the importance of epigenetics in radiological processes - Includes case studies focusing on humans irradiated by low doses of radiation and its effects
Author: V. I. Talanin
Author: V. I. Talanin
Author: Fumio Shimura
Author: 
Author: American Association for Crystal Growth (AACG)
Author: Matthew D. McCluskey
Author: Gianfranco Pacchioni
Author: 
Author: E. Kasper
Author: Victor A. Perevostchikov
Author: Ilya Obodovskiy