Lithium-Drifted Germanium Detectors: Their Fabrication and Use PDF Download
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Author: I. C. Brownridge Publisher: Springer Science & Business Media ISBN: 1461345987 Category : Technology & Engineering Languages : en Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Author: I. C. Brownridge Publisher: Springer Science & Business Media ISBN: 1461345987 Category : Technology & Engineering Languages : en Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Author: John P. Hurley Publisher: ISBN: Category : Languages : en Pages : 33
Book Description
Experiments designed to study the behavior of various Ge(Li) detector systems are described. Techniques of improving energy resolution are discussed. Measurements of detector response to thermal radiation are described. A series of measurements showing the variation of line width as a function of energy is discussed. Finally, the appearance of anomolous peaks in the pulse height spectra is described. (Author).
Author: Alvin H. Sher Publisher: ISBN: Category : Gamma rays Languages : en Pages : 24
Book Description
Six nomographs which can facilitate the fabrication and testing of lithium-drifted germanium gamma-ray detectors (Ge(Li) detectors) have been constructed which relate the following parameters:time, temperature, applied bias, and drifted depth:lithium mobility, crystal resistivity, and oxygen concentration; area, capacitance, and drifted depth for planar Ge(Li) detectors; drifted depth, length, and capacitance for coaxial Ge(Li) detectors; total spectral resolution; system noise, and detector resolution; gamma-ray energy, and effective Fano factor.The use of these nomographs is described and illustrative examples are given.(Author).
Author: Bijan Miremadi-K Publisher: ISBN: Category : Gamma ray spectrometry Languages : en Pages : 0
Book Description
In this thesis the method of fabrication of lithiumion-drifted detectors and their application to gamma-ray spectrometry of Si^°(d*n7)P^1 and Be^(a*ny)C12 reactions are described. 3 The planar-type detectors up to 5 cm sensitive 3 volume and a coaxial type detector of 10 cm sensitive volume have been fabricated. But due to the high leakage current caused by surface contamination* only a few planar-type detectors have been successfully tested. The intrinsic resolution of these detectors for 66l KeV gamma-ray of Cs1^ vary between 3.4 KeV to l6.7 KeV. The energy resolution of the best detector obtained was 3.4 KeV and 7*7 KeV for gamma-rays of energies 0.122 and 2.62 MeV respectively. This detector exhibited an absolute efficiency of 70$ for 122 KeV* decreasing to 0.8$ near the 2 MeV region. 3 A detector with sensitive volume of 3 cm has been 30 31 used to study the gamma-rays produced in the S1J (d*ny)P^ reaction with the hope of determining the branching ratios of 31 PJ gamma-ray transitions. But the low efficiency of the detector above 4 MeV did not allow such measurements to be made. In 12 addition* the 4.43 MeV gamma-ray for C produced by the Q 12 Be^(a*n7)C reaction was studied. This gamma-ray exhibited a Doppler shift and broadening which is discussed as a means of obtaining the lifetimes of nuclear excited states.
Author: Panel on the Use of Lithium-Drifted Germanium Gamma-Ray Detectors for Research in Nuclear Physics (INTERNATIONAL ATOMIC ENERGY AGENCY) Publisher: ISBN: Category : Languages : en Pages : 225
Author: James Benedict Mullady Publisher: ISBN: Category : Languages : en Pages : 55
Book Description
A simple technique for fabricating lithium-drift germanium radiation detectors for use in gamma-ray spectroscopy is described in detail. Lithium-ion drift is conducted in room atmosphere at constant temperature and voltage for 470 hours to obtain a 2 mm thick sensitive region 7.5cm2 in area. One detector made by this method gives 10.3 kev (fwhm) resolution for the Cs137 662 kev gamma-ray. Leakage current at 77K and 65 volts reverse bias is 1.65 x 0.0000001 A.
Author: I. C. Brownridge
Author: I. C. Brownridge
Author: John P. Hurley
Author: Alvin H. Sher
Author: Edward Vincent DeBoeser
Author: Bijan Miremadi-K
Author: I C Brownridge
Author: Panel on the Use of Lithium-Drifted Germanium Gamma-Ray Detectors for Research in Nuclear Physics (INTERNATIONAL ATOMIC ENERGY AGENCY)
Author: James Benedict Mullady
Author: International Atomic Energy Agency
Author: A. J. Levy