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Author: Matthias Lang Publisher: ISBN: 9780542727542 Category : Germanium alloys Languages : en Pages :
Book Description
The unique material properties of Silicon-Carbide (SiC) make it a superior choice over Silicon or Gallium-Arsenide for applications in power electronics. Unfortunately, SiC semiconductor technology was only developed in recent years and its processes are still immature. Additionally, proper lattice matched compatible elements and alloy materials are rare, which gives other wide-bandgap materials, such as Gallium-Nitride, dominance. Furthermore, the well-established standard CMOS processes can not be applied to SiC in all cases. Finding proper complementary elements and alloys could bring SiC into competition with other wide-bandgap materials again. This thesis describes the incorporation of Germanium (Ge) in SiC as a way of bandgap engineering. Alloying with Germanium is believed to lower the bandgap of SiC, therefore using it to create heterojunction devices. I will introduce Ge-alloyed SiC heterojunction diodes, transistors and Schottky-barrier diodes, and address its advantages over their isomaterial devices. The design of the above mentioned devices will be reported, as well as all fabrication steps. Finally, a thorough analysis and evaluation will be concluded based on device measurements.
Author: Matthias Lang Publisher: ISBN: 9780542727542 Category : Germanium alloys Languages : en Pages :
Book Description
The unique material properties of Silicon-Carbide (SiC) make it a superior choice over Silicon or Gallium-Arsenide for applications in power electronics. Unfortunately, SiC semiconductor technology was only developed in recent years and its processes are still immature. Additionally, proper lattice matched compatible elements and alloy materials are rare, which gives other wide-bandgap materials, such as Gallium-Nitride, dominance. Furthermore, the well-established standard CMOS processes can not be applied to SiC in all cases. Finding proper complementary elements and alloys could bring SiC into competition with other wide-bandgap materials again. This thesis describes the incorporation of Germanium (Ge) in SiC as a way of bandgap engineering. Alloying with Germanium is believed to lower the bandgap of SiC, therefore using it to create heterojunction devices. I will introduce Ge-alloyed SiC heterojunction diodes, transistors and Schottky-barrier diodes, and address its advantages over their isomaterial devices. The design of the above mentioned devices will be reported, as well as all fabrication steps. Finally, a thorough analysis and evaluation will be concluded based on device measurements.
Author: National Aeronautics and Space Administration (NASA) Publisher: Createspace Independent Publishing Platform ISBN: 9781722766245 Category : Languages : en Pages : 34
Book Description
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Author: Gary L. Katulka Publisher: ISBN: 9780549393603 Category : Germanium alloys Languages : en Pages :
Book Description
SiC possesses highly unique and interesting properties. The large bandgap and extremely high thermal conductivity make it an excellent material candidate for high voltage and high power electronics which can be exploited for both commercial and military applications. The chemical inertness of SiC is advantageous for applications requiring tolerance to harsh environments and very high temperatures, owing mainly to the strong Si-C sp3 bond. While fabricating ohmic contacts for SiC is very challenging due to large surface barrier heights, once formed the contacts are thermally stable to extremely high temperatures. We have shown in our experiments that specialized ohmic contacts on 4H-SiC are stable and exhibit resistivity changes of at most 3.8% for contacts exposed to the temperature range of 600-1120°C and current densities of 2.5 kA/cm 2 . Reported for the first time by our group in 1999 at the University of Delaware, heterostructure devices with newly developed SiC:Ge alloys were extensively investigated. Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction (XRD) measurements demonstrated thermal stability of the material up to 1000°C and implied an increase in the lattice constant. Although the only practical method for impurity doping, due to the very low diffusivity in SiC, is with ion implantation we experimentally measured the diffusivity of Ge in SiC in the range of 1.05 x 10 -15 cm 2 /s to 1.45 x 10 -15 cm 2 /s. This is considered valuable new information for purposes of precise device processing, considering the implant and contact anneal temperatures for SiC are in excess of 1000°C. SiC/SiC:Ge rectifiers were fabricated and analyzed in collaboration with Northrop Grumman, Baltimore, MD. Our experimental measurements from the rectifiers revealed the forward current was higher by as much as 0.5 mA for SiC/SiC:Ge devices compared to devices without Ge, and built-in voltages were consistently lower by between 100-42 mV. Contact resistance studies showed that SiC:Ge rectifiers had a greatly reduced contact resistance and specific contact resistivity compared to un-implanted SiC devices, for both n and p conductivity types. The Ge in n-SiC reduced the contact resistance and the specific contact resistivity by a factor of 5.6 and 8.8, respectively. In p-SiC, the Ge had an even more pronounced effect, reducing the contact resistance by a factor of 18.6 and lowering the specific contact resistivity by a factor of 14.5. Finally our 2MeV He+ RBS channeling studies suggested that a significant portion of the Ge in SiC:Ge implanted substrates was physically located on Si substitutional lattice sites within the host 4H-SiC crystal. This was true for samples containing between 0.6% and 1.25% Ge, and numerous channeling angles were utilized in the study with support from the Ion Beam Lab at the University of Michigan, Ann Arbor, MI. These results are considered highly important experimental findings which corroborate our earlier work and further promote SiC:Ge as a viable semiconductor material for high-power, high-temperature heterostructures with 4H-SiC.
Author: Konstantinos Zekentes Publisher: Materials Research Forum LLC ISBN: 1945291850 Category : Technology & Engineering Languages : en Pages : 249
Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author: Yasuto Hijikata Publisher: BoD – Books on Demand ISBN: 9535109170 Category : Science Languages : en Pages : 416
Book Description
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Author: Konstantinos Zekentes Publisher: Materials Research Forum LLC ISBN: 164490067X Category : Technology & Engineering Languages : en Pages : 292
Book Description
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Author: Christian Morath Publisher: ISBN: 9781423546870 Category : Languages : en Pages : 166
Book Description
Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Author: Publisher: ISBN: Category : Languages : en Pages : 35
Book Description
A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.
Author: Matthias Lang
Author: Matthias Lang
Author: National Aeronautics and Space Administration (NASA)
Author: Gary L. Katulka
Author: Konstantinos Zekentes
Author: Yasuto Hijikata
Author: Christian P. Morath (2LT, USAF.)
Author: Konstantinos Zekentes
Author: Jesse B. Tucker
Author: Christian Morath
Author: