The Fabrication and Characterization of High Temperature Terahertz Emitters, and DNA-sensitive Transistors Based on Silicon-germanium and Silicon Carbide Materials PDF Download
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Author: Guangchi Xuan Publisher: ProQuest ISBN: 9780549387091 Category : DNA. Languages : en Pages :
Book Description
In recent years, new applications in Terahertz (THz) imaging, spectroscopy, ranging and telecommunication had initiated huge research interest in THz emitting devices. There were few suitable sources available, however, in the THz frequency range (1-10 THz). Thus more powerful terahertz sources were strongly desired, especially with higher operating temperatures. This dissertation described two THz emitting devices based on Si and SiC materials that demonstrated much higher operating temperatures than what was previously published. Dry etching with xenon difluoride (XeF 2) was a well-known process for the isotropic removal of silicon. The etching of silicon germanium alloys with XeF 2, however, had not been investigated. Here, the XeF 2 dry etching of SiGe-alloys was characterized versus composition and XeF 2 partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provided etch rates versus process conditions and etched surface roughness, which were useful information for accurately fabricating SiGe-based structures and devices. Label-free detection of DNA molecules via electronic methods were also investigated in this dissertation. A device that was similar to conventional metal-oxide-semiconductor (MOS) was described. The current-voltage characteristic was used to investigate the behavior of this Si-based field effect device with DNA solutions of various concentrations and molecular states deposited on the sensing region.
Author: Guangchi Xuan Publisher: ProQuest ISBN: 9780549387091 Category : DNA. Languages : en Pages :
Book Description
In recent years, new applications in Terahertz (THz) imaging, spectroscopy, ranging and telecommunication had initiated huge research interest in THz emitting devices. There were few suitable sources available, however, in the THz frequency range (1-10 THz). Thus more powerful terahertz sources were strongly desired, especially with higher operating temperatures. This dissertation described two THz emitting devices based on Si and SiC materials that demonstrated much higher operating temperatures than what was previously published. Dry etching with xenon difluoride (XeF 2) was a well-known process for the isotropic removal of silicon. The etching of silicon germanium alloys with XeF 2, however, had not been investigated. Here, the XeF 2 dry etching of SiGe-alloys was characterized versus composition and XeF 2 partial pressures. It was found that the etch rates showed a strong dependence on Ge content of the etched materials. The roughness of the etched surfaces was also investigated. This study provided etch rates versus process conditions and etched surface roughness, which were useful information for accurately fabricating SiGe-based structures and devices. Label-free detection of DNA molecules via electronic methods were also investigated in this dissertation. A device that was similar to conventional metal-oxide-semiconductor (MOS) was described. The current-voltage characteristic was used to investigate the behavior of this Si-based field effect device with DNA solutions of various concentrations and molecular states deposited on the sensing region.
Author: Gary L. Katulka Publisher: ISBN: 9780549393603 Category : Germanium alloys Languages : en Pages :
Book Description
SiC possesses highly unique and interesting properties. The large bandgap and extremely high thermal conductivity make it an excellent material candidate for high voltage and high power electronics which can be exploited for both commercial and military applications. The chemical inertness of SiC is advantageous for applications requiring tolerance to harsh environments and very high temperatures, owing mainly to the strong Si-C sp3 bond. While fabricating ohmic contacts for SiC is very challenging due to large surface barrier heights, once formed the contacts are thermally stable to extremely high temperatures. We have shown in our experiments that specialized ohmic contacts on 4H-SiC are stable and exhibit resistivity changes of at most 3.8% for contacts exposed to the temperature range of 600-1120°C and current densities of 2.5 kA/cm 2 . Reported for the first time by our group in 1999 at the University of Delaware, heterostructure devices with newly developed SiC:Ge alloys were extensively investigated. Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction (XRD) measurements demonstrated thermal stability of the material up to 1000°C and implied an increase in the lattice constant. Although the only practical method for impurity doping, due to the very low diffusivity in SiC, is with ion implantation we experimentally measured the diffusivity of Ge in SiC in the range of 1.05 x 10 -15 cm 2 /s to 1.45 x 10 -15 cm 2 /s. This is considered valuable new information for purposes of precise device processing, considering the implant and contact anneal temperatures for SiC are in excess of 1000°C. SiC/SiC:Ge rectifiers were fabricated and analyzed in collaboration with Northrop Grumman, Baltimore, MD. Our experimental measurements from the rectifiers revealed the forward current was higher by as much as 0.5 mA for SiC/SiC:Ge devices compared to devices without Ge, and built-in voltages were consistently lower by between 100-42 mV. Contact resistance studies showed that SiC:Ge rectifiers had a greatly reduced contact resistance and specific contact resistivity compared to un-implanted SiC devices, for both n and p conductivity types. The Ge in n-SiC reduced the contact resistance and the specific contact resistivity by a factor of 5.6 and 8.8, respectively. In p-SiC, the Ge had an even more pronounced effect, reducing the contact resistance by a factor of 18.6 and lowering the specific contact resistivity by a factor of 14.5. Finally our 2MeV He+ RBS channeling studies suggested that a significant portion of the Ge in SiC:Ge implanted substrates was physically located on Si substitutional lattice sites within the host 4H-SiC crystal. This was true for samples containing between 0.6% and 1.25% Ge, and numerous channeling angles were utilized in the study with support from the Ion Beam Lab at the University of Michigan, Ann Arbor, MI. These results are considered highly important experimental findings which corroborate our earlier work and further promote SiC:Ge as a viable semiconductor material for high-power, high-temperature heterostructures with 4H-SiC.
Author: Ioannis Kymissis Publisher: Springer Science & Business Media ISBN: 0387921346 Category : Technology & Engineering Languages : en Pages : 156
Book Description
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Author: Matthias Lang Publisher: ISBN: 9780542727542 Category : Germanium alloys Languages : en Pages :
Book Description
The unique material properties of Silicon-Carbide (SiC) make it a superior choice over Silicon or Gallium-Arsenide for applications in power electronics. Unfortunately, SiC semiconductor technology was only developed in recent years and its processes are still immature. Additionally, proper lattice matched compatible elements and alloy materials are rare, which gives other wide-bandgap materials, such as Gallium-Nitride, dominance. Furthermore, the well-established standard CMOS processes can not be applied to SiC in all cases. Finding proper complementary elements and alloys could bring SiC into competition with other wide-bandgap materials again. This thesis describes the incorporation of Germanium (Ge) in SiC as a way of bandgap engineering. Alloying with Germanium is believed to lower the bandgap of SiC, therefore using it to create heterojunction devices. I will introduce Ge-alloyed SiC heterojunction diodes, transistors and Schottky-barrier diodes, and address its advantages over their isomaterial devices. The design of the above mentioned devices will be reported, as well as all fabrication steps. Finally, a thorough analysis and evaluation will be concluded based on device measurements.
Author: National Aeronautics and Space Administration (NASA) Publisher: Createspace Independent Publishing Platform ISBN: 9781722766245 Category : Languages : en Pages : 34
Book Description
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Author: Kaushal D. Patel Publisher: ISBN: Category : Languages : en Pages : 69
Book Description
This research work is dealt with the fabrication of the optically triggered silicon carbide MESFET. The fabrication of the silicon carbide MESFET device has been chronologically described to study the device structure, process development, and material properties. In order to understand the fabrication process, the optimization of photo-resist processing, ion implanted doping process, chemical etching process, silicon oxide growth on SiC material, stoichiometry silicon oxide with SiC material and comparative study of silicon oxide growth for silicon and carbon faces of SiC, nickel and indium tin oxide materials deposition for ohmic and Schottky contacts have been studied to optimize the unit steps of fabrication process. A detailed study on ion implantation, high-temperature annealing, and electrical device isolation has been performed. Different failure analyses for wafer and device level have been conducted to monitor the device performance, fabrication processing and material properties. I-V characteristics of fabricated SiC MESFET device has been measured by the curve tracer and compared with other fabricated GaN MESFE device.
Author: Niccolò Rinaldi Publisher: CRC Press ISBN: 1000794407 Category : Technology & Engineering Languages : en Pages : 377
Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author: Guangchi Xuan
Author: Guangchi Xuan
Author: 
Author: Gary L. Katulka
Author: Ioannis Kymissis
Author: Matthias Lang
Author: Kristofer J. Roe
Author: National Aeronautics and Space Administration (NASA)
Author: Kaushal D. Patel
Author: Niccolò Rinaldi
Author: Kristine Bedner