Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Book Description
The Electronic Theory of Heavily Doped Semiconductors
Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Book Description
The electronic theory of heavily doped semiconductors, by V.L. Bonch-Bruyevich, tr
Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
The Electron Theory of Heavily Doped Semiconductors ; Trans. by R.S. Knox
Author: V. L. Bonch-Bruyevich
Publisher:
ISBN:
Category :
Languages : en
Pages : 131
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 131
Book Description
Electronic Properties of Doped Semiconductors
Author: B.I. Shklovskii
Publisher: Springer Science & Business Media
ISBN: 3662024039
Category : Science
Languages : en
Pages : 400
Book Description
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Publisher: Springer Science & Business Media
ISBN: 3662024039
Category : Science
Languages : en
Pages : 400
Book Description
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Heavily Doped Semiconductors
Author: V. I. Fistul
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428
Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428
Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
The Electronic Theory of Heavily Doped Seniconductors
Author: V. L. Bonch-Bruyevich
Publisher:
ISBN:
Category :
Languages : en
Pages : 131
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 131
Book Description
On the Theory of Heavily Doped Semiconductors
Electronic Properties of Inhomogeneous Semiconductors
Author: A.Y. Shik
Publisher: CRC Press
ISBN: 9782884490436
Category : Science
Languages : en
Pages : 180
Book Description
Publisher: CRC Press
ISBN: 9782884490436
Category : Science
Languages : en
Pages : 180
Book Description
Electronic Properties of Doped Semiconductors
Author: Boris Ionovič Šklovskij
Publisher:
ISBN: 9780487129951
Category :
Languages : en
Pages : 388
Book Description
Publisher:
ISBN: 9780487129951
Category :
Languages : en
Pages : 388
Book Description
Advanced Theory of Semiconductor Devices
Author: Karl Hess
Publisher: Wiley-IEEE Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 360
Book Description
Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today’s world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III–V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p—n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.
Publisher: Wiley-IEEE Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 360
Book Description
Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today’s world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III–V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p—n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.