The electronic properties of semiconductors, semiconductor-simple metal interfaces, and transition metal alloys PDF Download

Author: Jeffrey S. Nelson
Publisher:
ISBN:
Category :
Languages : en
Pages : 90

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Author: Jeffrey Steven Nelson
Publisher:
ISBN:
Category :
Languages : en
Pages : 200

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Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269

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Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Author: Gerd Lehmann
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 206

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The excitation spectrum or band structure of electronics is often interpreted as the electronic structure. This definition is based on the Landau theory of elementary excitations, which shows that the reaction of a many-particle system on a weak external perturbation can be described by nearly non-interacting low-energy excitations of one-particle type. In metals these excitations close to the Fermi energy are only lightly damped. On this basis many electronic properties, especially of metals, can be understood and calculated, a breakthrough which has made a considerable contribution to materials science. This book focuses on the basic principles of solid state physics and in particular on actual problems and recent applications which have not previously been reviewed. At present a common electron theory for all types of solids is developing, unifying the viewing and treatment of the electronic structure and electronic properties of metals and semiconductors.

Author: K. A. Kikoin
Publisher: World Scientific
ISBN: 9789810218836
Category : Technology & Engineering
Languages : en
Pages : 368

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This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (Ti2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.

Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 9400906579
Category : Science
Languages : en
Pages : 302

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Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Author: C. Calandra
Publisher:
ISBN:
Category :
Languages : en
Pages : 94

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Author: Winfried Monch
Publisher:
ISBN: 9789400906587
Category :
Languages : en
Pages : 312

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Author: J. S. Dugdale
Publisher: Cambridge University Press
ISBN: 0521268826
Category : Science
Languages : en
Pages : 257

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An introductory treatment of the electrical properties of disordered metals, first published in 1995.

Author: Akio Hiraki
Publisher: IOS Press
ISBN: 9784274900396
Category : Technology & Engineering
Languages : en
Pages : 422

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