Author: Sheng S. LiPublisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 44
Book Description
The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N-type Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 44
Book Description
The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N-type Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 0
Book Description
Semiconductor Measurement Technology. 33
Author: S. S. LiThe Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N-type Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 44
Book Description
The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon
Author: Sheng S. LiPublisher:
ISBN:
Category : Holes (Electron deficiencies)
Languages : en
Pages : 56
Book Description
Author: Sheng S. Li
Author: Shen S. Li
Author: 
Author: 
Author: