Author: Curtiss Jae HellaPublisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
The Chemical Vapor Depositions of HfO2 and HfO2/SiO2 Nanolaminates
Author: Curtiss Jae HellaChemical Vapor Deposition
Author: Electrochemical Society. High Temperature Materials DivisionPublisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686
Book Description
Chemical Vapor Deposition of Mixed Metal Oxides
Author: Lijuan ZhongAn Introduction to Gravity Modification
Author: Benjamin T. SolomonPublisher: Universal-Publishers
ISBN: 1612330894
Category : Science
Languages : en
Pages : 532
Book Description
An Introduction to Gravity Modification, Second Edition is the result of a 12-year (1999-2011) study into the theoretical and technological feasibility of gravity modification, that presents the new physics of forces by replacing relativistic, quantum and string theories with process models. Gravity, electromagnetism and mechanical forces are unified by Ni fields, and obey a common equation g = (tau)c DEGREES2. Gravity modification is defined as the modification of the strength and direction of the gravitational acceleration without the use of mass as the primary source of this modification, in local space time. It consists of field modulation and field vectoring. Field modulation is the ability to attenuate or amplify a force field. Field vectoring is the ability to change the direction of this force field . This book reaches out to a wider audience, and not just to the theoretical physicist; to engineers and technologist who have the funding to experiment; just as Arno Penzias and Robert Woodrow Wilson experimented with the Holmdel Horn Antenna and discovered the microwave background radiation. The mathematics is easier than that taught in theoretical physics and therefore accessible to a wider audience such as these engineers and technolog
Atomic Layer Deposition for Semiconductors
Author: Cheol Seong HwangPublisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Chemical Vapour Deposition
Author: Anthony C. JonesPublisher: Royal Society of Chemistry
ISBN: 0854044655
Category : Science
Languages : en
Pages : 600
Book Description
"The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
Handbook of Semiconductor Manufacturing Technology
Author: Yoshio NishiPublisher: CRC Press
ISBN: 1420017667
Category : Technology & Engineering
Languages : en
Pages : 1720
Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
BioNanoFluidic MEMS
Author: Peter J. HeskethPublisher: Springer Science & Business Media
ISBN: 038746283X
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
This book explains biosensor development fundamentals. It also initiates awareness in engineers and scientists who would like to develop and implement novel biosensors for agriculture, biomedicine, homeland security, environmental needs, and disease identification. In addition, the book introduces and lays the basic foundation for design, fabrication, testing, and implementation of next generation biosensors through hands-on learning.
Nano-CMOS Gate Dielectric Engineering
Author: Hei WongPublisher: CRC Press
ISBN: 1351833286
Category : Technology & Engineering
Languages : en
Pages : 251
Book Description
According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.
Atomic Layer Deposition of Nanostructured Materials
Author: Nicola PinnaPublisher: John Wiley & Sons
ISBN: 3527639926
Category : Technology & Engineering
Languages : en
Pages : 463
Book Description
Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.