Ion Implantation: Basics to Device Fabrication PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Ion Implantation: Basics to Device Fabrication PDF full book. Access full book title Ion Implantation: Basics to Device Fabrication by Emanuele Rimini. Download full books in PDF and EPUB format.
Author: Emanuele Rimini Publisher: Springer Science & Business Media ISBN: 1461522595 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: Emanuele Rimini Publisher: Springer Science & Business Media ISBN: 1461522595 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: Michael Nastasi Publisher: Springer Science & Business Media ISBN: 3540452982 Category : Science Languages : en Pages : 271
Book Description
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Author: J.F. Ziegler Publisher: Elsevier ISBN: 0323144012 Category : Science Languages : en Pages : 649
Book Description
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author: J. S. Williams Publisher: Academic Press ISBN: 1483220648 Category : Technology & Engineering Languages : en Pages : 432
Book Description
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Author: P. D. Townsend Publisher: Cambridge University Press ISBN: 9780521394307 Category : Science Languages : en Pages : 296
Book Description
This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. The book concludes with a survey of the exciting range of potential applications.
Author: Ishaq Ahmad Publisher: BoD – Books on Demand ISBN: 178923414X Category : Science Languages : en Pages : 190
Book Description
Ion beam of various energies is a standard research tool in many areas of science, from basic physics to diverse areas in space science and technology, device fabrications, materials science, environment science, and medical sciences. It is an advance and versatile tool to frequently discover applications across a broad range of disciplines and fields. Moreover, scientists are continuously improving the ion beam sources and accelerators to explore ion beam at the forefront of scientific endeavours. This book provides a glance view on MeV ion beam applications, focused ion beam generation and its applications as well as practical applications of ion implantation.
Author: Zengliang Yu Publisher: Springer Science & Business Media ISBN: 0387255311 Category : Science Languages : en Pages : 303
Book Description
Introduction to Ion Bean Biotechnology presents an comprehensive primer on radiation-induced mutations and implantation of charged particles altering biological development. As such, its one of the most intriging and leading tools in bioengineering cells. IIBB cover the physics of ions particles, the biological effects of ion implantations in cells, and the subsequent use in bacteria, in viruses, and in plants. IIBB covers important areas: Inducing genetic mutations on the molecular level Inducing cells to catalyze targeted gene transfer Ion beam technology is a new area, still very young IIBB will be essentinal reading for any student, reseacher, or industry professional seeking to understand and master the mechanisms of such mutations.
Author: A. D. Pogrebnjak Publisher: Nova Science Publishers ISBN: 9781536139631 Category : SCIENCE Languages : en Pages : 334
Book Description
"New results in the field of ion implantation from the experienced scientists from different countries are presented in this book. Influence of ion implantation on structure and properties of semi-conducting materials, instrumental steels and alloys, nanocomposite coatings, including multielement ones, titanium alloys with the shape memory effect and super-elasticity are discussed in detail within this book. New data on novel applications of ion implantation for the modification and testing (radiation hardness simulation) of memristive devices, as well as application of ion implantation of group V dopants in the MCT epilayer are presented in this book. Potential use of ion implantation for the synthesis of Ag nanoparticles in a thin Si layer for the development of thin-film solar cells fabrication technology is discussed. The effect of ion implantation on the physical and mechanical properties of the hard alloy plates based on tungsten carbide and a cobalt binder is described. A study of the effects of ion implantation on the phase composition and the structure of materials is presented. The role of defects in the formation of the phase composition of the ion-implanted materials, structural-phase transformations in metals after ion implantation is investigated. This book will be interesting for professionals in the study of solid state physics, nuclear physics, physics of semi-conductors and nanomaterials. It can also be useful for masters and PhD students, as well as for professionals researching the fabrication and investigation of protective materials with enhanced physical-mechanical and tribological properties, good biocompatibility and resistance to irradiation"--
Author: Emanuele Rimini
Author: Emanuele Rimini
Author: Michael Nastasi
Author: 
Author: J.F. Ziegler
Author: Michael Nastasi
Author: J. S. Williams
Author: P. D. Townsend
Author: Ishaq Ahmad
Author: Zengliang Yu
Author: A. D. Pogrebnjak