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Tetrahedrally-Bonded Amorphous Semiconductors

Tetrahedrally-Bonded Amorphous Semiconductors PDF Author: David A. Adler
Publisher: Springer
ISBN: 1489953612
Category : Technology & Engineering
Languages : en
Pages : 557

Book Description


Tetrahedrally-Bonded Amorphous Semiconductors

Tetrahedrally-Bonded Amorphous Semiconductors PDF Author: David A. Adler
Publisher: Springer
ISBN: 1489953612
Category : Technology & Engineering
Languages : en
Pages : 557

Book Description


Tetrahedrally Bonded Amorphous Semiconductors, Yorktown Heights, 1974

Tetrahedrally Bonded Amorphous Semiconductors, Yorktown Heights, 1974 PDF Author: Marc Herbert Brodsky
Publisher:
ISBN:
Category : Medical
Languages : en
Pages : 392

Book Description


Tetrahedrally Bonded Amorphous Carbon Films I

Tetrahedrally Bonded Amorphous Carbon Films I PDF Author: Bernd Schultrich
Publisher: Springer
ISBN: 3662559277
Category : Technology & Engineering
Languages : en
Pages : 769

Book Description
This book presents the status quo of the structure, preparation, properties and applications of tetrahedrally bonded amorphous carbon (ta-C) films and compares them with related film systems. Tetrahedrally bonded amorphous carbon films (ta-C) combine some of the outstanding properties of diamond with the versatility of amorphous materials. The book compares experimental results with the predictions of theoretical analyses, condensing them to practicable rules. It is strictly application oriented, emphasizing the exceptional potential of ta-C for tribological coatings of tools and components.

Physics of Amorphous Semiconductors

Physics of Amorphous Semiconductors PDF Author: Kazuo Morigaki
Publisher: World Scientific
ISBN: 9789810213817
Category : Technology & Engineering
Languages : en
Pages : 440

Book Description
This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si: H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si: H, nature of weak bonds and gap states in a-Si: H, mechanisms for light-induced defect creation in a-Si: H and chalcogenides, quantum phenomena in multilayer fi

Fundamental Physics of Amorphous Semiconductors

Fundamental Physics of Amorphous Semiconductors PDF Author: F. Yonezawa
Publisher: Springer Science & Business Media
ISBN: 3642816045
Category : Technology & Engineering
Languages : en
Pages : 190

Book Description
The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon ductor group in Japan. A few years ago, we started to organize an interna tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.

Amorphous Semiconductors

Amorphous Semiconductors PDF Author: Kazuo Morigaki
Publisher: John Wiley & Sons
ISBN: 1118757920
Category : Technology & Engineering
Languages : en
Pages : 286

Book Description
Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

High-Pressure and Low-Temperature Physics

High-Pressure and Low-Temperature Physics PDF Author: J.A. Woollam
Publisher: Springer Science & Business Media
ISBN: 1468433512
Category : Technology & Engineering
Languages : en
Pages : 597

Book Description
High pressure science is a rapidly growing diverse fi. e1d. The high pressure technique has become a powerful tool for both the study and preparation of materials. In spi. te of the many high pressure conferences held in recent years, I felt that there was a need for scientists within a well-defined area (not bound merely by the common experimental technique) to meet in an atmosphere conducive to frank exchange and close interaction. In this spirit, the Cleveland State University hosted such a conference from July 20 to 22, 1977, in which the physics of solids under high pressures and at low tempera tures was specifically examined. Both the original and review papers presented at the conference and the candid discussions following their presentations appear in this volume. They clearly cover a rather complete spectrum of current research in the physics of solids at high pressures and low temperatures. I wish to thank the National Aeronautics and Space Administra tion, the Office of Naval Research and the National Science Founda tion for their financial support of the conference. In addition, I wish especially to thank Steinar Huang for his unceasing assistance in arranging this conference. I also wish to thank him and Francis Stephenson for their assistance in preparing this book. C. W. Chu, Chairman, International Conference on High Pressure and Low Temperature Physics v Contents HYDROGEN AND METAL-HYDRIDES (Chairman: I. Spain) PROSPECTS FOR METALLIC HYDROGEN 1 A. L.

The Materials Science of Semiconductors

The Materials Science of Semiconductors PDF Author: Angus Rockett
Publisher: Springer Science & Business Media
ISBN: 0387686509
Category : Technology & Engineering
Languages : en
Pages : 629

Book Description
This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.

Proceedings of the 17th International Conference on the Physics of Semiconductors

Proceedings of the 17th International Conference on the Physics of Semiconductors PDF Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580

Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6ยท1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Light Scattering in Solids 1

Light Scattering in Solids 1 PDF Author: M. Cardona
Publisher: Springer Science & Business Media
ISBN: 3540375686
Category : Science
Languages : en
Pages : 352

Book Description
This book is devoted to the problem of inelastic light scattering in semiconductors, i.e., to processes in which a photon impinges upon a serniconductor, creating or anihilating one or several quasi-particles, and then emerges with an energy somewhat different from that of the incident photon. In light scattering spectroscopy the incident photons are monochromatic; one measures the energy distribution of the scat tered photons with a spectrometer. Because of its monochromaticity, power, and collimation, lasers are ideal sources for light scattering spectroscopy. Consequently, developments in the field of light scattering have followed, in recent years, the developments in laser technology. The scattering efficiencies are usually weak and thus light scattering spectroscopy requires sophisticated double and tripie monochromators with high stray light rejection ratio. Both, powerful lasers and good monochromators are specially important for studying the scattering of light to which the sampies of interest are opaque, as is the case in most semiconductors. This explains why these materials are relatively late corners to the field of light scattering. In spite of these difficulties, the field of light scattcring in semi conductors has experienced a boom in recent years, and reached a certain degree of maturity. Because of space limitations, the editor was faced with the necessity of making a choice in the subjects to be included. In spite of the natural bias towards his own research interests he hopes to have gathered a number of articles representative of present-day research in the field.