Author: John Lawrence ClementsPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 98
Book Description
Systematic Modeling of the Metal-oxide-semiconductor Field Effect Transistor
Author: John Lawrence ClementsPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 98
Book Description
Systematic Metal-oxide-semiconductor Transistor Modelling for Analog Applications
Author: Paul Stephen FechnerPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 494
Book Description
Simulation and Modeling of Curved Channel Metal Oxide Semiconductor Field Effect Transistor
Author: Jatmiko Endro SusenoPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 139
Book Description
Modeling and Optimization of Metal-oxide-semiconductor Field-effect Transistor Large-scale Integrated Circuits
Author: Donald Lambert FraserPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 686
Book Description
Charge-Based MOS Transistor Modeling
Author: Christian C. EnzPublisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328
Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Physical Model of a Metal Oxide Semiconductor Field Effect Transistor
Author: Nalina BalakrishnanModeling the Effects of Heavy Charged Particles on Metal-oxide Semiconductor Field Effect Transistors
Author: Kevin M. Kattner (CAPT, USAF.)Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 92
Book Description
Compact Modeling of Double-gate Metal-oxide-semiconductor Field-effect Transistor
Author: Xuejie ShiPublisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 0
Book Description
Modeling of a Double Gate Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Author: Thomas Allen PhillipsPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 184
Book Description
MOSFET Modeling for Circuit Analysis and Design
Author: Carlos Galup-MontoroPublisher: World Scientific
ISBN: 9812568107
Category : Technology & Engineering
Languages : en
Pages : 445
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.