Author: Lan ChenPublisher:
ISBN:
Category : Silicon dioxide films
Languages : en
Pages : 120
Book Description
Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide
Author: Lan ChenPublisher:
ISBN:
Category : Silicon dioxide films
Languages : en
Pages : 120
Book Description
Synthesis and Characterization of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane
Author: Yanyao YuPublisher:
ISBN:
Category : Diethysilane
Languages : en
Pages : 116
Book Description
Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition Using Ditertiarybutylsilane and Oxygen
Author: Sung-Jun LeePublisher:
ISBN:
Category : Silicon dioxide films
Languages : en
Pages : 104
Book Description
Plasma-enhanced Chemical Vapor Deposition of Silicon Dioxide
Author: Arjen BoogaardPublisher:
ISBN: 9789036531306
Category :
Languages : en
Pages : 186
Book Description
Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition
Author: Sutham NiyomwasPublisher:
ISBN:
Category : Thin films
Languages : en
Pages : 86
Book Description
Microwave Plasma-enhanced Chemical Vapor Deposition and Characterization of Diamond and Silicon Nitride Thin Films
Author: Kevin John GrannenSynthesis and Characterization of Silicon Nitride Film Deposited by Plasma Enhanced Chemical Vapor Deposition from Ditertiary-butyl Silane
Author: Kei-Turng ShihPublisher:
ISBN:
Category : Ditertiary-butyl silane
Languages : en
Pages : 158
Book Description
Silicon Nitride and Silicon Dioxide Thin Insulating Films VII
Author: Electrochemical Society. MeetingPublisher: The Electrochemical Society
ISBN: 9781566773478
Category : Science
Languages : en
Pages : 652
Book Description
Synthesis and Characterization of Diamond Thin Films by Microwave Plasma-enhanced Chemical Vapor Deposition (MPECVD)
Author: Shih-Feng ChouPublisher:
ISBN:
Category :
Languages : en
Pages : 174
Book Description
Diamond thin films are deposited on silicon wafers by MPECVD process with the presence of methane, argon, and hydrogen gases. The reaction chamber is designed with an internal microwave reaction cavity and a high-pressure pocket for improving deposition conditions. Scanning electron microscopy reveals tetrahedral and cauliflower-shaped crystals for polycrystalline diamond and nanocrystalline diamond films, respectively. Spectroscopy ellipsometer studies indicate that diamond-like carbon (DLC) films are deposited with a thickness of 700 nm. Fourier transform infrared spectroscopy shows C-H stretching in the range from 2800 cm -1 to 3000 cm -1 . Nanoindentation is performed on DLC films with an average hardness of 10.98 GPa and an average elastic modulus of 90.32 GPa. The effects of chamber pressure, microwave forward power, and gas mixture on the plasma chemistry are discussed. Substrate temperature has a significant influence on film growth rate, and substrate pretreatment can enhance the quality of diamond films.
Author: