Author: Mahalingam Bhaskaran
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 112
Book Description
Synthesis and Characterization of LPCVD Silicon Carbide Thin Films for X-ray Lithography
Author: Mahalingam Bhaskaran
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 112
Book Description
Synthesis and Characterization of LPCVD Boron Nitride Films for X-ray Lithography
Author: Wen-Pin Kuo
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 172
Book Description
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 172
Book Description
Synthesis and Characterization of LPCVD SiC Films Using Novel Precursors
Author: Mahalingam Bhaskaran
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 190
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 190
Book Description
Synthesis and Characterization of Skutterudite Thin Films and Superlattice Structures
Author: James Christopher Caylor
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro- and Nano-electromechanical Systems
Author: Christopher Stephen Roper
Publisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Low Temperature Synthesis and Characterization of Low Pressure Chemical Vapor Depostion Silicon Dioxide Films Using Diethylsilane
Author: Chakravarthy Srinivasa Gorthy
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 114
Book Description
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 114
Book Description
Amorphous Silicon Carbide Thin Films
Author: Mariana Amorim Fraga
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0
Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0
Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Synthesis and Characterization of Phosphosilicate Glass Thin Films Foe Sensor Applicationb
Author: Hui Wu
Publisher:
ISBN:
Category : Silicon-carbide thin films
Languages : en
Pages : 114
Book Description
Publisher:
ISBN:
Category : Silicon-carbide thin films
Languages : en
Pages : 114
Book Description
Characterization of LPCVD Deposited Silicon Dioxide Thin Films
Growth and Characterization of Polycrystalline Silicon and Microcrystalline Silicon Carbide Thin Films Using ECR-PECVD
Author: Bryan Kent Oliver
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.