Synthesis and Characterization of Aluminium - Doped Zinc Oxide Thin Films for Cell PDF Download

Author: Hang Khume Tan
Publisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 125

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Author: Fernando Lugo
Publisher:
ISBN: 9781124131412
Category :
Languages : en
Pages : 0

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Author: Bojanna P. Shantheyanda
Publisher:
ISBN:
Category : Aluminum
Languages : en
Pages : 76

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Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCO's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film. The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.

Author: Sotirios Baskoutas
Publisher: MDPI
ISBN: 3038973025
Category : Electronic books
Languages : en
Pages : 303

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This book is a printed edition of the Special Issue "Zinc Oxide Nanostructures: Synthesis and Characterization" that was published in Materials

Author: Moran Press-Yekymov
Publisher:
ISBN:
Category :
Languages : en
Pages : 122

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Author: David Winarski
Publisher:
ISBN:
Category : Oxide coating
Languages : en
Pages : 87

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Zinc oxide has been given much attention recently as it is promising for various semiconductor device applications. ZnO has a direct band gap of 3.3 eV, high exciton binding energy of 60 meV and can exist in various bulk powder and thin film forms for different applications. ZnO is naturally n-type with various structural defects, which sparks further investigation into the material properties. Although there are many potential applications for this ZnO, an overall lack of understand and control of intrinsic defects has proven difficult to obtain consistent, repeatable results. This work studies both synthesis and characterization of zinc oxide in an effort to produce high quality transparent conductive oxides. The sol-gel spin coating method was used to obtain highly transparent ZnO thin films with high UV absorbance. This research develops a new more consistent method for synthesis of these thin films, providing insight for maintaining quality control for each step in the procedure. A sol-gel spin coating technique is optimized, yielding highly transparent polycrystalline ZnO thin films with tunable electrical properties. Annealing treatment in hydrogen and zinc atmospheres is researched in an effort to increase electrical conductivity and better understand intrinsic properties of the material. These treatment have shown significant effects on the properties of ZnO. Characterization of doped and undoped ZnO synthesized by the sol-gel spin coating method was carried out using scanning electron microscopy, UV-Visible range absorbance, X-ray diffraction, and the Hall Effect. Treatment in hydrogen shows an overall decrease in the number of crystal phases and visible absorbance while zinc seems to have the opposite effect. The Hall Effect has shown that both annealing environments increase the n-type conductivity, yielding a ZnO thin film with a carrier concentration as high as 3.001 × 1021 cm-3.

Author: Owan Watkins
Publisher:
ISBN:
Category : Aluminum foil
Languages : en
Pages : 186

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Author: Usha Chandra
Publisher: BoD – Books on Demand
ISBN: 9535132458
Category : Science
Languages : en
Pages : 312

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Versatility, extended compositional ranges, better homogeneity, lesser energy consumption, and requirement of nonexpensive equipments have boosted the use of sol-gel process on top of the popularity in the synthesis of nanosystems. The sol-gel technique has not only revolutionized oxide ceramics industry and/or material science but has also extended widely into multidimensional applications. The book Recent Applications in Sol-Gel Synthesis comprises 14 chapters that deal mainly with the application-oriented aspects of the technique. Sol-gel prepared metal oxide (MO) nanostructures like nanospheres, nanorods, nanoflakes, nanotubes, and nanoribbons have been employed in biomedical applications involving drug deliveries, mimicking of natural bone, and antimicrobial activities. The possibility of controlling grain size in aerogel and preparation of ultrahigh-temperature ceramic (UHTC)-based materials, fluorescent glasses, ultraviolet photosensors, and photocatalysts have been discussed in detail by the experts in the field. The usefulness of sol-gel materials as active GRIN, as textile finisher, and as leather modifier with water-repellent and oil-resistive properties would be an incentive for researchers keen to pursue the field.

Author: Michelle Anne Myers
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Applications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser deposition is employed to grow Ag-doped ZnO thin films, which are characterized in an attempt to understand the ability of Ag to act as a p-type dopant. By correlating the effects of the substrate temperature, oxygen pressure, and laser energy on the electrical and microstructural properties of Ag-doped ZnO films grown on c-cut sapphire substrates, p-type conductivity is achieved under elevated substrate temperatures. Characteristic stacking fault features have been continuously observed by transmission electron microscopy in all of the p-type films. Photoluminescence studies on n-type and p-type Ag-doped ZnO thin films demonstrate the role of stacking faults in determining the conductivity of the films. Exciton emission attributed to basal plane stacking faults suggests that the acceptor impurities are localized nearby the stacking faults in the n-type films. The photoluminescence investigation provides a correlation between microstructural characteristics and electrical properties of Ag- doped ZnO thin films; a link that enables further understanding of the doping nature of Ag impurities in ZnO. Under optimized deposition conditions, various substrates are investigated as potential candidates for ZnO thin film growth, including r -cut sapphire, quartz, and amorphous glass. Electrical results indicated that despite narrow conditions for obtaining p-type conductivity at a given substrate temperature, flexibility in substrate choice enables improved electrical properties. In parallel, N+-ion implantation at elevated temperatures is explored as an alternative approach to achieve p-type ZnO. The ion implantation fluence and temperature have been optimized to achieve p-type conductivity. Transmission electron microscopy reveals that characteristic stacking fault features are present throughout the p-type films, however in n-type N-doped films high-density defect clusters are observed. These results suggest that the temperature under which ion implantation is performed plays a critical role in determining the amount of dynamic defect re- combination that can take place, as well as defect cluster formation processes. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder. Finally, the fabrication and properties of p-type Ag-doped ZnO/n-type ZnO and p-type N-doped ZnO/n-type ZnO thin film junctions were reported. For the N-doped sample, a rectifying behavior was observed in the I-V curve, consistent with N-doped ZnO being p-type and forming a p-n junction. The turn-on voltage of the device was -2.3 V under forward bias. The Ag-doped samples did not result in rectifying behavior as a result of conversion of the p-type layer to n-type behavior under the n- type layer deposition conditions. The systematic studies in this dissertation provide possible routes to grow p-type Ag-doped ZnO films and in-situ thermal activation of N-implanted dopant ions, to overcome the growth temperature limits, and to push one step closer to the future integration of ZnO-based devices. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/149354

Author: Swati Sharma
Publisher:
ISBN: 9780549116202
Category : Electrical, computer, and systems engineering
Languages : en
Pages : 276

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