Author: Symposium on Ferroelectric SemiconductorsPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Proceedings of the International Symposium on Applications of Ferroelectrics, Switzerland, August 29 to September 1, 1988
Author: Peter GünterPublisher: CRC Press
ISBN: 9782881243844
Category :
Languages : en
Pages : 444
Book Description
Oxides / Oxide
Author: E. NakamuraPublisher: Springer Science & Business Media
ISBN: 9783540511274
Category : Science
Languages : en
Pages : 494
Book Description
Volume III/28 is a supplement to volume III/16a+b Ferroelectrics and Related Substances. It also consists of two parts a and b. The present subvolume III/28a contains data on ferroelectric oxides, supplementing III/16a which appeared in 1981. Subvolume III/28b, due in 1990, will cover non-oxides, supplementing III/16b (published in 1982). Reliable data on both pure compounds and solid solutions, published mostly between 1978 and 1986 and some data from the literature up to early 1988 are critically evaluated and included. The dielectric and ferroelectric behaviour, as well as all other properties relevant to the characterization of these substances are presented in tables and figures. About 22,000 references have been surveyed with the aid of a computer. All values are given in SI units. Rapid localization of the required data is facilitated by an alphabetical index of substances and a two-dimensional survey of substances and properties dealt with in both subvolumes III/28a and III/16a.
International Meeting on Ferroelectricity
Author: Semiconductor Memories and Systems
Author: Andrea RedaelliPublisher: Woodhead Publishing
ISBN: 0128209461
Category : Technology & Engineering
Languages : en
Pages : 364
Book Description
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory
国立国会図書館所蔵科学技術関係欧文会議錄目錄
Author: 国立国会図書館 (Japan)Publisher:
ISBN:
Category : Science
Languages : en
Pages : 672
Book Description
Proceedings of the Second Symposium on Integrated Ferroelectrics
Author: Publisher:
ISBN:
Category : Ferroelectric crystals
Languages : en
Pages : 434
Book Description
International Symposium on Functional Diversification of Semiconductor Electronics 3 (More-Than-Moore 3)
Author: Y. ObengPublisher: The Electrochemical Society
ISBN: 1607687135
Category :
Languages : en
Pages : 130
Book Description
Ferroelectrics
Author: Mickaël LallartPublisher: BoD – Books on Demand
ISBN: 9533073322
Category : Science
Languages : en
Pages : 534
Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on ways to obtain high-quality materials exhibiting large ferroelectric activity. The book covers the aspect of material synthesis and growth, doping and composites, lead-free devices, and thin film synthesis. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric materials, allowing a deep understanding of the material aspects of ferroelectricity.
Proceedings of Third International Conference on Computational Electronics for Wireless Communications
Author: Sanyog RawatPublisher: Springer Nature
ISBN: 9819719461
Category :
Languages : en
Pages : 395
Book Description
Author: