![Symposium D: Group IV Heterostructures, Physics and Devices (Si, Ge, C, [alpha]-Sn) PDF](https://books.google.com/books/content/images/frontcover/uPm1PgAACAAJ?fife=w150-h200)
Author: J. M. LourtiozPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Symposium D: Group IV Heterostructures, Physics and Devices (Si, Ge, C, [alpha]-Sn)
![Symposium D: Group IV Heterostructures, Physics and Devices (Si, Ge, C, [alpha]-Sn) PDF](https://books.google.com/books/content/images/frontcover/uPm1PgAACAAJ?fife=w80-h100)
Author: J. M. LourtiozGroup IV Heterostructures, Physics and Devices (Si, Ge, C, Sn)
Author: J.-M. LourtiozPublisher: Elsevier Science
ISBN: 9780444205025
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
These proceedings contain the majority of papers presented at Symposium D, "Group IV heterostructures, physics and devices (Si,Ge,C,&agr;-Sn)", of the Spring Meeting of the European Materials Research Society, held at the Congress Centre, Strasbourg, France, 4-7 June 1996. This Symposium was attended by about 150 scientists from throughout the world, among whom 18 were invited speakers. The aim of the Symposium was to discuss the most recent results in all fields of Group IV heterostructures and devices from fundamental physics to industrial applications. Regular and invited contributions were then welcomed which addressed the different aspects of growth, the effects of strain relaxation, particularly in SiGeC alloys, the basic optical and electrical properties of heterostructures and low-dimensional structures, the microelectronic and optoelectronics, such as rare-earth doping techniques, was also selected. Except for minor changes, the order of papers presented in this special issue of Thin Solid Films closely follows the order of topics listed above as well as the order of sessions at the Symposium.
Papers Presented at the European Materials Research Society 1996 Spring Meeting
Author: Bernard DrévillonPapers Presented at the European Materials Research Society 1996 Spring Meeting
Author: Papers Presented at the European Materials Research Society 1996 Spring Conference, Symposium D: Group IV Heterostructures, Physics and Devices (Si, Ge, C, [Alpha]-Sn)
![Papers Presented at the European Materials Research Society 1996 Spring Conference, Symposium D: Group IV Heterostructures, Physics and Devices (Si, Ge, C, [Alpha]-Sn) PDF](https://books.google.com/books/content/images/frontcover/ms2jDAEACAAJ?fife=w80-h100)
Author: Papers Presented at the European Materials Research Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices (Si, Ge, C, Alpha-Sn)
Author: American Book Publishing Record Cumulative 1998
Author: R R Bowker PublishingPublisher:
ISBN: 9780835240871
Category :
Languages : en
Pages : 1312
Book Description
Light Emission from Silicon, Progress Towards Si-based Optoelectronics
Author: Jan LinnrosPublisher: Elsevier Publishing Company
ISBN:
Category : Medical
Languages : en
Pages : 558
Book Description
This volume contains the papers presented at Symposium B of the 1998 spring meeting of the European Materials Research Society (E-MRS). The symposium attracted well over 100 scientists engaged in one common goal - that of developing efficient light emitting Si-based structures. This included various technical approaches such as porous silicon, Si nanocrystals, rare-earth doping of Si, light emitting silicides, Si-based multilayer and alloy structures and SiGe structures. In this respect, the meeting had a more multidisciplinary approach than previous meetings, the main idea being a fruitful comparison of the different techniques that would also stimulate cross-disciplinary research. Generally, presentations at the conference revealed high scientific quality and several new findings and refinements of existing techniques were disclosed. One example was the much-debated report of optical gain from a structure containing Si nanocrystals. Another example was the dramatically improved stability of derivatised porous silicon. The technique of producing porous Si microcavities has been refined such that cavities of high optical quality may now be fabricated. The latest material to emerge as a candidate for a Si-based light emitting device has been iron silicide and room temperature operation has been reported. The interest is further motivated by the prospect of obtaining direct bandgap emission. The 90 collected papers represent about 80% of the submitted papers out of more than 140 accepted abstracts. The papers have been grouped according to subject although no ordering within each subgroup has been attempted. All invited papers have been placed in the foremost section to serve as reviews in each separate field.
Nitrides and Related Wide Band Gap Materials
Author: A. HangleiterPublisher:
ISBN:
Category : Science
Languages : en
Pages : 440
Book Description
The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.
High Temperature Superconductor Thin Films--growth Mechanisms-interfaces-multilayers
Author: H.-U. HabermeierPublisher: Elsevier Science & Technology
ISBN:
Category : Science
Languages : en
Pages : 404
Book Description
Hardbound. The four day EMRS Spring Meeting in Strasbourg, France (June 4 -7 1996) Symposium on High Temperature Superconductor Thin Films: Growth Mechanisms - Interfaces - Multilayers was held in conjunction with the Third Workshop in Europe. The benefit of including the Workshop into the Symposium was the advantage of bringing in an additional far larger and disciplinarily more diverse audience and through the organization of the workshop receiving invited and contributed lectures as well as posters which was supplemental to the main Symposium. The Symposium focused on the specific topics of growth interfaces and multilayers and highlighted the continuing need for there to be active interplay between chemists designing new precursor molecules and depositing thin films, and engineers applying HTS materials with deficiencies and limitations to commercially oriented devices.The majority of papers presented at the Symposium are included in these pro